| No. |
Part Name |
Description |
Manufacturer |
| 1 |
C1100H |
Uncapsulated Chip Transistor for Microcircuit Assemblies |
Newmarket Transistors NKT |
| 2 |
HCTL1100H |
General Purpose Motion Control ICs |
Agilent (Hewlett-Packard) |
| 3 |
MA81100H |
Silicon planar type |
Panasonic |
| 4 |
MAZS1100H |
Silicon planar type |
Panasonic |
| 5 |
MRF5S21100H |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 6 |
MRF5S21100H |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 7 |
MRF5S21100H |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 8 |
MRF5S21100HR3 |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 9 |
MRF5S21100HSR3 |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 10 |
MRF6S21100HR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 11 |
MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 12 |
SD1100HD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 13 |
TB1100H |
Thyristor Surge Protection Devices (TSPDs) |
Diodes |
| 14 |
TB1100H-13 |
100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
Diodes |
| 15 |
TB1100H-13-F |
50A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTION DEVICE |
Diodes |
| 16 |
UCB1100HL_X3C |
Advanced modem/audio analog front-end |
Philips |
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