No. |
Part Name |
Description |
Manufacturer |
1 |
MAD1103F |
Monolithic diode array. High current/fast switching. |
Motorola |
2 |
NJG1103F1 |
1.5/1.9GHz LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
3 |
NJG1103F1-C1 |
1.5/1.9GHz LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
4 |
NJG1103F1-C2 |
LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
5 |
NJG1103F1-L1 |
LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
6 |
NJG1103F1-L1 |
1.5/1.9GHz LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
7 |
NJG1103F1-L2 |
1.5/1.9GHz LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
8 |
NJG1103F1-L2 |
LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
9 |
NJG1103F1-L3 |
LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
10 |
NJG1103F1-L4 |
LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
11 |
NJW1103FC3 |
DOLBY PRO LOGIC SURROUND DECODER�� |
New Japan Radio |
12 |
RN1103F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
13 |
RN1103FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
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