| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MAD1103F |
Monolithic diode array. High current/fast switching. |
Motorola |
| 2 |
NJG1103F1 |
1.5/1.9GHz LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 3 |
NJG1103F1-C1 |
1.5/1.9GHz LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 4 |
NJG1103F1-C2 |
LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 5 |
NJG1103F1-L1 |
LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 6 |
NJG1103F1-L1 |
1.5/1.9GHz LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 7 |
NJG1103F1-L2 |
1.5/1.9GHz LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 8 |
NJG1103F1-L2 |
LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 9 |
NJG1103F1-L3 |
LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 10 |
NJG1103F1-L4 |
LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 11 |
NJW1103FC3 |
DOLBY PRO LOGIC SURROUND DECODER�� |
New Japan Radio |
| 12 |
RN1103F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 13 |
RN1103FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| | | |
