| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ100 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5KE100 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 3 |
1.5KE110CARL4 |
1500 Watt mosorb zener transient voltage suppressors, 110V |
ON Semiconductor |
| 4 |
1.5SMC110 |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 110V. 1500W peak power, 5.0W steady state. |
Motorola |
| 5 |
1.5SMC110A |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 110V. 1500W peak power, 5.0W steady state. |
Motorola |
| 6 |
1.5SMCJ110 |
1500W voltage supressor, 110V |
MEI |
| 7 |
1.5SMCJ110A |
1500W voltage supressor, 110V |
MEI |
| 8 |
1.5SMCJ110C |
1500W voltage supressor, 110V |
MEI |
| 9 |
1.5SMCJ110CA |
1500W voltage supressor, 110V |
MEI |
| 10 |
1/4M110Z |
Zener Diode 1/4W 110V |
Motorola |
| 11 |
1214-110V |
Pulsed Power L-Band (Si) |
Microsemi |
| 12 |
15042-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 110VDC |
NTE Electronics |
| 13 |
15KP110 |
110V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 14 |
15KP110 |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 15 |
15KP110A |
110V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 16 |
15KP110A |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 17 |
15KP110C |
Diode TVS Single Bi-Dir 110V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 18 |
15KP110CA |
Diode TVS Single Bi-Dir 110V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 19 |
15KPA110 |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 20 |
15KPA110A |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 21 |
15KPA110C |
Diode TVS Single Bi-Dir 110V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 22 |
15KPA110CA |
Diode TVS Single Bi-Dir 110V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 23 |
1EZ110D5 |
Pd=1.0W, Vz=110V zener diode |
MCC |
| 24 |
1N1796 |
Zener Diode 110V |
Motorola |
| 25 |
1N1796A |
Zener Diode 110V |
Motorola |
| 26 |
1N1809 |
Zener Diode 110V 10W |
Motorola |
| 27 |
1N1809A |
Zener Diode 110V 10W |
Motorola |
| 28 |
1N2009 |
Zener Diode 110V 10W |
Motorola |
| 29 |
1N277 |
110V ultra fast recovery rectifier |
MCC |
| 30 |
1N277 |
Diode 110V 0.075A 2-Pin DO-7 |
New Jersey Semiconductor |
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