No. |
Part Name |
Description |
Manufacturer |
1 |
1/4M110Z |
Zener Diode 1/4W 110V |
Motorola |
2 |
1M110Z |
Zener: |
Taiwan Semiconductor |
3 |
1M110Z |
110 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
4 |
1M110Z |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
5 |
1M110ZS |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
6 |
1M110ZS1 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 1% tolerance. |
Motorola |
7 |
1M110ZS10 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
8 |
1M110ZS10 |
1.0 WATT SURMETIC 30 SILICON ZENER DIODES |
Motorola |
9 |
1M110ZS2 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 2% tolerance. |
Motorola |
10 |
1M110ZS5 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
11 |
1M110ZS5 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 5% tolerance. |
Motorola |
12 |
1SMA110Z |
Zener: |
Taiwan Semiconductor |
13 |
1SMA110Z |
110 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
14 |
1SMA110Z |
SURFACE MOUNT SILICON ZENER DIODE |
TRSYS |
15 |
2M110Z |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
16 |
AUIRLR3110Z |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
17 |
AUIRLR3110ZTR |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
18 |
AUIRLR3110ZTRR |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
19 |
AUIRLU3110Z |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a I-Pak Package |
International Rectifier |
20 |
IRLR3110Z |
100V HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
21 |
IRLR3110ZTRPBF |
100V HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
22 |
IRLU3110Z |
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
23 |
IRLU3110ZPBF |
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
24 |
KM616FS4110ZI-10 |
100ns; V(cc): -2 to +3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
25 |
KM616FS4110ZI-7 |
70ns; V(cc): -2 to +3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
26 |
M29KW016E110ZA1T |
16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash Memory |
SGS Thomson Microelectronics |
27 |
M29KW016E110ZA1T |
16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash Memory |
ST Microelectronics |
28 |
M29KW032E110ZA1T |
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash�� Memory |
SGS Thomson Microelectronics |
29 |
M29KW032E110ZA1T |
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash�� Memory |
ST Microelectronics |
30 |
M29KW032E110ZA3T |
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash�� Memory |
SGS Thomson Microelectronics |
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