| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1/4M110Z |
Zener Diode 1/4W 110V |
Motorola |
| 2 |
1M110Z |
Zener: |
Taiwan Semiconductor |
| 3 |
1M110Z |
110 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 4 |
1M110Z |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 5 |
1M110ZS |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 6 |
1M110ZS1 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 1% tolerance. |
Motorola |
| 7 |
1M110ZS10 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 8 |
1M110ZS10 |
1.0 WATT SURMETIC 30 SILICON ZENER DIODES |
Motorola |
| 9 |
1M110ZS2 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 2% tolerance. |
Motorola |
| 10 |
1M110ZS5 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 11 |
1M110ZS5 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 5% tolerance. |
Motorola |
| 12 |
1SMA110Z |
Zener: |
Taiwan Semiconductor |
| 13 |
1SMA110Z |
110 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 14 |
1SMA110Z |
SURFACE MOUNT SILICON ZENER DIODE |
TRSYS |
| 15 |
2M110Z |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 16 |
AUIRLR3110Z |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 17 |
AUIRLR3110ZTR |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 18 |
AUIRLR3110ZTRR |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 19 |
AUIRLU3110Z |
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a I-Pak Package |
International Rectifier |
| 20 |
IRLR3110Z |
100V HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 21 |
IRLR3110ZTRPBF |
100V HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 22 |
IRLU3110Z |
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
| 23 |
IRLU3110ZPBF |
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package |
International Rectifier |
| 24 |
KM616FS4110ZI-10 |
100ns; V(cc): -2 to +3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
| 25 |
KM616FS4110ZI-7 |
70ns; V(cc): -2 to +3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
| 26 |
M29KW016E110ZA1T |
16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash Memory |
SGS Thomson Microelectronics |
| 27 |
M29KW016E110ZA1T |
16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash Memory |
ST Microelectronics |
| 28 |
M29KW032E110ZA1T |
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash�� Memory |
SGS Thomson Microelectronics |
| 29 |
M29KW032E110ZA1T |
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash�� Memory |
ST Microelectronics |
| 30 |
M29KW032E110ZA3T |
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash�� Memory |
SGS Thomson Microelectronics |
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