| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1110F |
1000 V single phase bridge 1.4-1.5 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 2 |
1110FA |
1000 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 3 |
1110FB |
1000 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 4 |
1110FC |
1000 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 5 |
1110FD |
1000 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 6 |
1110FE |
1000 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 7 |
1110FF |
1000 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 8 |
CC1110F16 |
Sub-1GHz System-on-Chip with MCU and 16kB Flash memory |
Texas Instruments |
| 9 |
CC1110F16RHHR |
Sub-1 GHz wireless MCU with up to 32 kB Flash memory 36-VQFN -40 to 85 |
Texas Instruments |
| 10 |
CC1110F16RHHT |
Sub-1 GHz wireless MCU with up to 32 kB Flash memory 36-VQFN -40 to 85 |
Texas Instruments |
| 11 |
CC1110F32 |
Sub-1GHz System-on-Chip with MCU and 32kB Flash memory |
Texas Instruments |
| 12 |
CC1110F32RHHR |
Sub-1 GHz wireless MCU with up to 32 kB Flash memory 36-VQFN -40 to 85 |
Texas Instruments |
| 13 |
CC1110F32RHHT |
Sub-1 GHz wireless MCU with up to 32 kB Flash memory 36-VQFN -40 to 85 |
Texas Instruments |
| 14 |
CC1110F8 |
Sub-1GHz System-on-Chip with MCU and 8kB Flash memory |
Texas Instruments |
| 15 |
CC1110F8RHHR |
Sub-1 GHz wireless MCU with up to 32 kB Flash memory 36-VQFN -40 to 85 |
Texas Instruments |
| 16 |
CC1110F8RHHT |
Sub-1 GHz wireless MCU with up to 32 kB Flash memory 36-VQFN -40 to 85 |
Texas Instruments |
| 17 |
LPC1110FD20 |
4kB flash, 1kB SRAM, SO20 package |
NXP Semiconductors |
| 18 |
M61110FP |
ASSP>ICs for Electronic Tuner>VIF/SIF Signal Processors |
Renesas |
| 19 |
RN1110F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 20 |
RN1110FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 21 |
TPH1110FNH |
Power MOSFET (N-ch 150V<VDSS≤250V) |
TOSHIBA |
| | | |
