| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6011B-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 2 |
AHA4011B-040PJC |
10 MBytes/sec reed-Solomon ERC (Error Correction Device) |
Advanced Hardware Architectures |
| 3 |
AT45DB011B-CC |
1-MEGABIT 2.7 VOLT ONLY DATA FLASH |
Atmel |
| 4 |
AT45DB011B-CI |
1-MEGABIT 2.7 VOLT ONLY DATA FLASH |
Atmel |
| 5 |
AT45DB011B-SC |
1-MEGABIT 2.7 VOLT ONLY DATA FLASH |
Atmel |
| 6 |
AT45DB011B-SI |
1-MEGABIT 2.7 VOLT ONLY DATA FLASH |
Atmel |
| 7 |
AT45DB011B-SU |
1-MEGABIT 2.7 VOLT ONLY DATA FLASH |
Atmel |
| 8 |
AT45DB011B-XC |
1-MEGABIT 2.7 VOLT ONLY DATA FLASH |
Atmel |
| 9 |
AT45DB011B-XI |
1-MEGABIT 2.7 VOLT ONLY DATA FLASH |
Atmel |
| 10 |
AT45DB011B-XU |
1-MEGABIT 2.7 VOLT ONLY DATA FLASH |
Atmel |
| 11 |
ATV02W111B-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=200Watts, VRWM=110V, Tolerance=5% |
Comchip Technology |
| 12 |
CD4011B-MIL |
CMOS Quad 2-Input NAND Gate |
Texas Instruments |
| 13 |
CRG-11B-1005 |
BI-DIRECTIONAL COUPLERS |
etc |
| 14 |
CY7C10211B-10VC |
1-Mbit (64K x 16) Static RAM |
Cypress |
| 15 |
CY7C10211B-10ZC |
1-Mbit (64K x 16) Static RAM |
Cypress |
| 16 |
DDZ11B-7 |
Zener Diodes |
Diodes |
| 17 |
K4F640811B-JC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
| 18 |
K4F640811B-JC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 19 |
K4F640811B-JC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 20 |
K4F640811B-TC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
| 21 |
K4F640811B-TC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 22 |
K4F640811B-TC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 23 |
K4F660811B-JC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
| 24 |
K4F660811B-JC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 25 |
K4F660811B-JC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 26 |
K4F660811B-TC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
| 27 |
K4F660811B-TC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 28 |
K4F660811B-TC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 29 |
M8811B-100 |
α DETECTOR |
TOSHIBA |
| 30 |
MC14511B-D |
BCD-To-Seven Segment Latch/Decoder/Driver |
ON Semiconductor |
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