| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4111D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 2 |
1N4111D-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 3 |
74HC11D-Q100 |
Triple 3-input AND gate |
Nexperia |
| 4 |
74HC11D-Q100 |
Triple 3-input AND gate |
NXP Semiconductors |
| 5 |
74HCT11D-Q100 |
Triple 3-input AND gate |
Nexperia |
| 6 |
74HCT11D-Q100 |
Triple 3-input AND gate |
NXP Semiconductors |
| 7 |
74LVC11D-Q100 |
Triple 3-input AND gate |
Nexperia |
| 8 |
JAN1N4111D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 9 |
JANS1N4111D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 10 |
JANTX1N4111D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 11 |
JANTXV1N4111D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 12 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 13 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 14 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 15 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 16 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 17 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 18 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 19 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 20 |
K4E170811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 21 |
K4E170811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 22 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 23 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 24 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 25 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 26 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 27 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 28 |
K4F160811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 29 |
K4F160811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 30 |
K4F170411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| | | |
