| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5378B |
100 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
| 2 |
1N5379B |
110 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
| 3 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 4 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 5 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 6 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 7 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 8 |
5962-9952502QZC |
5V, ISR high-performance CPLDs, 512 macrocells, 100MHz |
Cypress |
| 9 |
5962-9952601QZC |
3.3V, ISR high-performance CPLDs, 512 macrocells, 66MHz |
Cypress |
| 10 |
BFP181 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
| 11 |
BFP181R |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
| 12 |
BFS481 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) |
Siemens |
| 13 |
BZV58C100 |
100 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
| 14 |
BZV58C110 |
110 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
| 15 |
EPM3512AFC256-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 208 I/O pins, 10ns |
Altera Corporation |
| 16 |
EPM3512AFC256-7 |
Programmable logic , 512 macrocells, 32 logic array blocks, 208 I/O pins, 7ns |
Altera Corporation |
| 17 |
EPM3512AQC208-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 208 I/O pins, 10ns |
Altera Corporation |
| 18 |
EPM3512AQC208-7 |
Programmable logic , 512 macrocells, 32 logic array blocks, 208 I/O pins, 7ns |
Altera Corporation |
| 19 |
EPM7512AEBC256-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 10ns |
Altera Corporation |
| 20 |
EPM7512AEBC256-7 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 7ns |
Altera Corporation |
| 21 |
EPM7512AEBI256-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 10ns |
Altera Corporation |
| 22 |
EPM7512AEBI256-7 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 7ns |
Altera Corporation |
| 23 |
EPM7512AEFC256-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 10ns |
Altera Corporation |
| 24 |
EPM7512AEFC256-12 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 12ns |
Altera Corporation |
| 25 |
EPM7512AEFC256-7 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 7ns |
Altera Corporation |
| 26 |
EPM7512AEFI256-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 10ns |
Altera Corporation |
| 27 |
EPM7512AEQC208-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 176 I/O pins, 10ns |
Altera Corporation |
| 28 |
EPM7512AEQC208-12 |
Programmable logic , 512 macrocells, 32 logic array blocks, 176 I/O pins, 12ns |
Altera Corporation |
| 29 |
EPM7512AEQC208-7 |
Programmable logic , 512 macrocells, 32 logic array blocks, 176 I/O pins, 7ns |
Altera Corporation |
| 30 |
EPM7512AEQI208-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 176 I/O pins, 10ns |
Altera Corporation |
| | | |
