No. |
Part Name |
Description |
Manufacturer |
1 |
78M6612-DB-OMU-RF |
78M6612 Outlet Measurement Unit Model OMU1-S-RF Demo Kit |
MAXIM - Dallas Semiconductor |
2 |
80C554 |
80C51 8-bit microcontroller . 6 clock operation 16K/512 OTP/ROM/ROMless, 7 channel 10 bit A/D, I2C, PWM, capture/compare, high I/O, 64L LQFP |
Philips |
3 |
80C554,83C554,87C554 |
80C51 8-bit microcontroller 16 K / 512 OTP, 8 channel 10 bit A/D, I�C, PWM, capture/compare, high I/O |
Philips |
4 |
83C554 |
80C51 8-bit microcontroller . 6 clock operation 16K/512 OTP/ROM/ROMless, 7 channel 10 bit A/D, I2C, PWM, capture/compare, high I/O, 64L LQFP |
Philips |
5 |
87C524 |
80C51 8-bit microcontrollers 16K/32K, 512 OTP, I2C, watchdog timer |
Philips |
6 |
87C528 |
80C51 8-bit microcontrollers 16K/32K, 512 OTP, I2C, watchdog timer |
Philips |
7 |
87C554 |
80C51 8-bit microcontroller . 6 clock operation 16K/512 OTP/ROM/ROMless, 7 channel 10 bit A/D, I2C, PWM, capture/compare, high I/O, 64L LQFP |
Philips |
8 |
APL501P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12 OHM |
Advanced Power Technology |
9 |
APT5010JN |
POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm |
Advanced Power Technology |
10 |
APT5012JN |
POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm |
Advanced Power Technology |
11 |
BUZ350 |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.12 Ohm, 22A, NL |
Infineon |
12 |
BUZ36 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 22A 0.12 ohms |
Siliconix |
13 |
CYW256OXC |
12 Output Buffer for 2 DDR and 3 SRAM DIMMS |
Cypress |
14 |
CYW256OXCT |
12 Output Buffer for 2 DDR and 3 SRAM DIMMS |
Cypress |
15 |
DO-12 |
JEDEC DO12 OUTLINE |
Transitron Electronic |
16 |
FDH44N50 |
44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET |
Fairchild Semiconductor |
17 |
FSJ055D |
70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
18 |
FSJ055D1 |
70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
19 |
FSJ055D3 |
70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
20 |
FSJ055R |
70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
21 |
FSJ055R1 |
70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
22 |
FSJ055R3 |
70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
Intersil |
23 |
FSJ055R4 |
70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
Intersil |
24 |
HUF75339G3 |
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
Fairchild Semiconductor |
25 |
HUF75339G3 |
75A/ 55V/ 0.012 Ohm/ N-Channel UltraFET Power MOSFETs |
Intersil |
26 |
HUF75339P3 |
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
Fairchild Semiconductor |
27 |
HUF75339P3 |
75A/ 55V/ 0.012 Ohm/ N-Channel UltraFET Power MOSFETs |
Intersil |
28 |
HUF75339S3S |
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
Fairchild Semiconductor |
29 |
HUF75339S3S |
75A/ 55V/ 0.012 Ohm/ N-Channel UltraFET Power MOSFETs |
Intersil |
30 |
HUFA75339G3 |
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
Fairchild Semiconductor |
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