| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5638 |
Diode TVS Single Uni-Dir 12.9V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 2 |
1N6276 |
Diode TVS Single Uni-Dir 12.9V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 3 |
1N6276C |
Diode TVS Single Bi-Dir 12.9V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 4 |
CPDQT5V0SP-HF |
Halogen Free ESD Diodes, VC=12.9V, VESD=10kV |
Comchip Technology |
| 5 |
IPB15N03L |
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.9mOhm, 42A, LL |
Infineon |
| 6 |
IPP15N03L |
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL |
Infineon |
| 7 |
P6KE16 |
Diode TVS Single Uni-Dir 12.9V 600W Automotive 2-Pin DO-15 |
New Jersey Semiconductor |
| 8 |
P6KE16C |
Diode TVS Single Bi-Dir 12.9V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 9 |
PSMN013-80YS |
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET |
Nexperia |
| 10 |
PSMN013-80YS |
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET |
NXP Semiconductors |
| 11 |
SGA-3286 |
DC-5000 MHz, cascadable SIGe HBT MMIC amplifier. High gain: 12.9 dB at 1950 MHz. |
Stanford Microdevices |
| 12 |
SPI42N03S2L-13 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 12.9mOhm, 42A, LL |
Infineon |
| 13 |
SPP42N03S2L-13 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL |
Infineon |
| | | |
