| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N1200B |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 2 |
1N1200B |
Silicon Rectifier Diode |
Motorola |
| 3 |
1N1200B |
Diode Switching 100V 12A 2-Pin DO-4 |
New Jersey Semiconductor |
| 4 |
ADUM1200BR |
Dual-Channel Digital Isolator (2/0 Channel Directionality) |
Analog Devices |
| 5 |
ADUM1200BR-RL7 |
Dual-Channel Digital Isolator (2/0 Channel Directionality) |
Analog Devices |
| 6 |
ADUM1200BRZ |
Dual-Channel Digital Isolator (2/0 Channel Directionality) |
Analog Devices |
| 7 |
ADUM1200BRZ-RL7 |
Dual-Channel Digital Isolator (2/0 Channel Directionality) |
Analog Devices |
| 8 |
AMC1200BDUB |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
| 9 |
AMC1200BDUBR |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOP -40 to 105 |
Texas Instruments |
| 10 |
AMC1200BDWV |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 |
Texas Instruments |
| 11 |
AMC1200BDWVR |
4.25kV peak Isolated Amplifier for Current Shunt Measurements 8-SOIC -40 to 105 |
Texas Instruments |
| 12 |
FM1200B |
Schottky Diode |
Rectron Semiconductor |
| 13 |
KM416C1200B |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 14 |
KM416C1200BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 15 |
KM416C1200BJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 16 |
KM416C1200BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 17 |
KM416C1200BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 18 |
KM416C1200BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 19 |
KM416C1200BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 20 |
KM416C1200BT-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 21 |
KM416C1200BT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 22 |
KM416C1200BT-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 23 |
KM416C1200BTL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 24 |
KM416C1200BTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 25 |
KM416C1200BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 26 |
KM416V1200B |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 27 |
KM416V1200BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 28 |
KM416V1200BJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 29 |
KM416V1200BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 30 |
KM416V1200BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
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