| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N1204B |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 2 |
1N1204B |
Silicon Rectifier Diode |
Motorola |
| 3 |
1N1204B |
Diode Switching 400V 12A 2-Pin DO-4 |
New Jersey Semiconductor |
| 4 |
AMC1204BDW |
1-Bit, 20MHz, Second-Order, Isolated Delta-Sigma Modulator 16-SOIC -40 to 125 |
Texas Instruments |
| 5 |
AMC1204BDWR |
1-Bit, 20MHz, Second-Order, Isolated Delta-Sigma Modulator 16-SOIC -40 to 125 |
Texas Instruments |
| 6 |
AMC1204BDWV |
1-Bit, 20MHz, Second-Order, Isolated Delta-Sigma Modulator 8-SOIC -40 to 125 |
Texas Instruments |
| 7 |
AMC1204BDWVR |
1-Bit, 20MHz, Second-Order, Isolated Delta-Sigma Modulator 8-SOIC -40 to 125 |
Texas Instruments |
| 8 |
HAS-1204BM |
Ultra High-Speed 12-Bit A/D Converter |
Analog Devices |
| 9 |
KM416C1204BJ-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
| 10 |
KM416C1204BJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
| 11 |
KM416C1204BJ-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 12 |
KM416C1204BJ-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 13 |
KM416C1204BJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
| 14 |
KM416C1204BJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
| 15 |
KM416C1204BJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 16 |
KM416C1204BJ-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 17 |
KM416C1204BT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
| 18 |
KM416C1204BT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
| 19 |
KM416C1204BT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 20 |
KM416C1204BT-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 21 |
KM416C1204BT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
| 22 |
KM416C1204BT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
| 23 |
KM416C1204BT-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 24 |
KM416C1204BT-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 25 |
KM416V1204BJ |
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
| 26 |
KM416V1204BJ-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
| 27 |
KM416V1204BJ-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 28 |
KM416V1204BJ-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 29 |
KM416V1204BJ-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
| 30 |
KM416V1204BJ-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| | | |
