No. |
Part Name |
Description |
Manufacturer |
1 |
1812N102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
2 |
1812N104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
3 |
IXFH12N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
4 |
IXFH12N100 |
HiPerFET Power MOSFETs |
IXYS Corporation |
5 |
IXFH12N100F |
HiPerRF Power MOSFETs |
IXYS Corporation |
6 |
IXFH12N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
7 |
IXFM12N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
8 |
IXFM12N100 |
HiPerFET Power MOSFETs |
IXYS Corporation |
9 |
IXFR12N100F |
HiPerFET Power MOSFETs ISOPLUS247 |
IXYS Corporation |
10 |
IXFR12N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
11 |
IXFT12N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
12 |
IXFT12N100F |
HiPerRF Power MOSFETs |
IXYS Corporation |
13 |
IXFT12N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
14 |
IXGA12N100 |
1000V IGBT |
IXYS |
15 |
IXGA12N100A |
1000V IGBT |
IXYS |
16 |
IXGA12N100AU1 |
1000V IGBT |
IXYS |
17 |
IXGA12N100U1 |
1000V IGBT |
IXYS |
18 |
IXGH12N100 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
IXYS Corporation |
19 |
IXGH12N100A |
1000V low voltage high speed IGBT |
IXYS |
20 |
IXGH12N100AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
IXYS Corporation |
21 |
IXGH12N100U1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
IXYS Corporation |
22 |
IXGP12N100 |
1000V IGBT |
IXYS |
23 |
IXGP12N100A |
1000V IGBT |
IXYS |
24 |
IXGP12N100AU1 |
1000V IGBT |
IXYS |
25 |
IXGP12N100U1 |
1000V IGBT |
IXYS |
26 |
IXTH12N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
27 |
IXTM12N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
28 |
MTM12N10 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
29 |
MTM12N10 |
P-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
New Jersey Semiconductor |
30 |
MTM12N10E |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
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