| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE160 |
130.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2 |
1.5KE160C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 130.00 V. Test current IT = 1 mA. |
Bytes |
| 3 |
15KW130 |
130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 4 |
15KW130A |
130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5 |
2N3926 |
RF NPN Transistor 130...230MHZ FM mobile applications |
SGS Thomson Microelectronics |
| 6 |
2N3927 |
RF NPN Transistor 130...230MHZ FM mobile applications |
SGS Thomson Microelectronics |
| 7 |
2N6080 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 8 |
2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 9 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 10 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 11 |
5KP130 |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12 |
5KP130A |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 13 |
CT284 |
0.500W General purpose diode, 130.0V Vr, 0.025uA Ir |
Continental Device India Limited |
| 14 |
DSC1103AI2-130.0000T |
Clock and Timing - Oscillators |
Microchip |
| 15 |
MAX20-130.0C |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 16 |
MAX20-130.0C |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 17 |
MAX20-130.0CA |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 18 |
MAX20-130.0CA |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 19 |
MAX40-130.0C |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 20 |
MAX40-130.0C |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 21 |
MAX40-130.0CA |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 22 |
MAX40-130.0CA |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 23 |
MQF130.6-1500/06 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
| 24 |
NTE5289AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 130.0V. Zener test current Izt = 95mA. |
NTE Electronics |
| 25 |
P4KE160 |
130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 26 |
P4KE160-T3 |
Reverse stand-off voltage: 130.00V transient voltage suppressor |
Won-Top Electronics |
| 27 |
P4KE160-TB |
Reverse stand-off voltage: 130.00V transient voltage suppressor |
Won-Top Electronics |
| 28 |
P4KE160C |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 130.00 V. Test current IT = 1 mA. |
Bytes |
| 29 |
P4KE160C-T3 |
Reverse stand-off voltage: 130.00V transient voltage suppressor |
Won-Top Electronics |
| 30 |
P4KE160C-TB |
Reverse stand-off voltage: 130.00V transient voltage suppressor |
Won-Top Electronics |
| | | |
