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Datasheets for 130.0

Datasheets found :: 52
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 1.5KE160 130.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
2 1.5KE160C 1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 130.00 V. Test current IT = 1 mA. Bytes
3 15KW130 130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
4 15KW130A 130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
5 5KP130 130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
6 5KP130A 130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
7 CT284 0.500W General purpose diode, 130.0V Vr, 0.025uA Ir Continental Device India Limited
8 DSC1103AI2-130.0000T Clock and Timing - Oscillators Microchip
9 MAX20-130.0C 130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor
10 MAX20-130.0C 130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor
11 MAX20-130.0CA 130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor
12 MAX20-130.0CA 130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor
13 MAX40-130.0C 130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor
14 MAX40-130.0C 130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor
15 MAX40-130.0CA 130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor
16 MAX40-130.0CA 130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor
17 NTE5289AK 50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 130.0V. Zener test current Izt = 95mA. NTE Electronics
18 P4KE160 130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications MDE Semiconductor
19 P4KE160-T3 Reverse stand-off voltage: 130.00V transient voltage suppressor Won-Top Electronics
20 P4KE160-TB Reverse stand-off voltage: 130.00V transient voltage suppressor Won-Top Electronics
21 P4KE160C 400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 130.00 V. Test current IT = 1 mA. Bytes
22 P4KE160C-T3 Reverse stand-off voltage: 130.00V transient voltage suppressor Won-Top Electronics
23 P4KE160C-TB Reverse stand-off voltage: 130.00V transient voltage suppressor Won-Top Electronics
24 P4SMAJ130-T1 Reverse stand-off voltage: 130.00V surface mount transient voltage suppressor Won-Top Electronics
25 P4SMAJ130-T3 Reverse stand-off voltage: 130.00V surface mount transient voltage suppressor Won-Top Electronics
26 P4SMAJ130A-T1 Reverse stand-off voltage: 130.00V surface mount transient voltage suppressor Won-Top Electronics
27 P4SMAJ130A-T3 Reverse stand-off voltage: 130.00V surface mount transient voltage suppressor Won-Top Electronics
28 P4SMAJ130C-T1 Reverse stand-off voltage: 130.00V surface mount transient voltage suppressor Won-Top Electronics
29 P4SMAJ130C-T3 Reverse stand-off voltage: 130.00V surface mount transient voltage suppressor Won-Top Electronics
30 P4SMAJ130CA-T1 Reverse stand-off voltage: 130.00V surface mount transient voltage suppressor Won-Top Electronics


Datasheets found :: 52
Page: | 1 | 2 |



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