| No. |
Part Name |
Description |
Manufacturer |
| 1 |
14 DIP |
Package Dimensions |
Samsung Electronic |
| 2 |
14 DIP H/S |
Package Dimensions |
Samsung Electronic |
| 3 |
14 LEAD CERAMIC(DD) |
PACKAGE OUTLINES |
Intersil |
| 4 |
14 LEAD CERDIP(JD) |
PACKAGE OUTLINES |
Intersil |
| 5 |
14 LEAD FLATPACK(FD-1) |
PACKAGE OUTLINES |
Intersil |
| 6 |
14 LEAD FLATPACK(FD-2) |
PACKAGE OUTLINES |
Intersil |
| 7 |
14 LEAD PLASTIC(PD) |
PACKAGE OUTLINES |
Intersil |
| 8 |
14 SOP |
14SOP Package Dimensions |
Samsung Electronic |
| 9 |
1445Q(QPL) |
Bulk Metal Foil Technology, 1445Q-14 Pin and 1446Q-16 Pin DIP Packages |
Vishay |
| 10 |
1446Q(QPL) |
Bulk Metal Foil Technology, 1445Q-14 Pin and 1446Q-16 Pin DIP Packages |
Vishay |
| 11 |
15KP120 |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A. |
Panjit International Inc |
| 12 |
15KP120C |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A. |
Panjit International Inc |
| 13 |
1G-114 |
TRANSITRON 1G114 OUTLINE |
Transitron Electronic |
| 14 |
1N4114 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 15 |
1N4114 (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
| 16 |
1N4614 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 17 |
1N4614 (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
| 18 |
1N4714 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 19 |
1N4767 |
Low-level temperature-compensated zener reference diode. Max voltage 0.014 V. |
Motorola |
| 20 |
1N4768A |
Low-level temperature-compensated zener reference diode. Max voltage 0.014 V. |
Motorola |
| 21 |
1N4772 |
Low-level temperature-compensated zener reference diode. Max voltage 0.014 V. |
Motorola |
| 22 |
1N4773A |
Low-level temperature-compensated zener reference diode. Max voltage 0.014 V. |
Motorola |
| 23 |
1N5244 |
500mW, 14 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 24 |
1N5244A |
14 V, 9.0 mA, zener diode |
Leshan Radio Company |
| 25 |
1N5244AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 14 V. Tolerance +-10%. |
Microsemi |
| 26 |
1N5244BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 14 V. Tolerance +-5%. |
Microsemi |
| 27 |
1N5244C |
14 V, 9.0 mA, zener diode |
Leshan Radio Company |
| 28 |
1N5244D |
14 V, 9.0 mA, zener diode |
Leshan Radio Company |
| 29 |
1N5244UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 14 V. |
Microsemi |
| 30 |
1N5351B |
14 V, 100 mA, 5 W glass passivated zener diode |
Fagor |
| | | |
