| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 2 |
1416-100 |
100 W, 50 V, 1400-1600 MHz common base transistor |
GHz Technology |
| 3 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 4 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 6 |
81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 7 |
81416-20 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 8 |
81416-6 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 9 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 10 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 11 |
AM1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 12 |
AM1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 13 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 14 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 15 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 16 |
FS1416-105K |
FERRITE SHIELDED INDUCTORS |
etc |
| 17 |
FS1416-125K |
FERRITE SHIELDED INDUCTORS |
etc |
| 18 |
FS1416-154K |
FERRITE SHIELDED INDUCTORS |
etc |
| 19 |
FS1416-155K |
FERRITE SHIELDED INDUCTORS |
etc |
| 20 |
FS1416-184K |
FERRITE SHIELDED INDUCTORS |
etc |
| 21 |
FS1416-224K |
FERRITE SHIELDED INDUCTORS |
etc |
| 22 |
FS1416-274K |
FERRITE SHIELDED INDUCTORS |
etc |
| 23 |
FS1416-334K |
FERRITE SHIELDED INDUCTORS |
etc |
| 24 |
FS1416-394K |
FERRITE SHIELDED INDUCTORS |
etc |
| 25 |
FS1416-474K |
FERRITE SHIELDED INDUCTORS |
etc |
| 26 |
FS1416-564K |
FERRITE SHIELDED INDUCTORS |
etc |
| 27 |
FS1416-684K |
FERRITE SHIELDED INDUCTORS |
etc |
| 28 |
FS1416-824K |
FERRITE SHIELDED INDUCTORS |
etc |
| | | |
