No. |
Part Name |
Description |
Manufacturer |
1 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
2 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
3 |
A43L0616AV-5.5 |
5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
4 |
A43L2616V-7PH |
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM |
AMIC Technology |
5 |
A43L8316AV-7 |
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
6 |
BD8143MUV |
High precision Gamma Correction ICs with built-in DAC |
ROHM |
7 |
BD8143MUV-E2 |
High precision Gamma Correction ICs with built-in DAC |
ROHM |
8 |
CY37064VP84-143JC |
3.3V, ISR high-performance CPLDs, 64 macrocells, 143MHz |
Cypress |
9 |
HY57V161610ETP-7I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
10 |
HY57V281620ALT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
11 |
HY57V281620AT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
12 |
HY57V281620HCLT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
13 |
HY57V281620HCLT-7I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
14 |
HY57V281620HCLTP-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
15 |
HY57V281620HCST-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
16 |
HY57V281620HCST-7I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
17 |
HY57V281620HCSTP-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
18 |
HY57V281620HCT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
19 |
HY57V281620HCT-7I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
20 |
HY57V281620HCTP-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
21 |
HY57V658020BTC-7I |
4Mbit x 2 bank x 8 SDRAM, LVTTL, 143MHz |
Hynix Semiconductor |
22 |
IH5143M/D |
Low Power Fast CMOS Analog Switches |
MAXIM - Dallas Semiconductor |
23 |
IH5143MJE |
High-Level CMOS Analog Switches |
Intersil |
24 |
IH5143MJE |
Low Power Fast CMOS Analog Switches |
MAXIM - Dallas Semiconductor |
25 |
IH5143MJE883B |
High-Level CMOS Analog Switches |
Intersil |
26 |
K4S641632C-TC70 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
27 |
K4S641632C-TL70 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
28 |
K4S643232H-TL70 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 143MHz |
Samsung Electronic |
29 |
KIC7143M |
Analog CMOS Integrated Circuits |
Korea Electronics (KEC) |
30 |
KM416S4030CT-G7 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
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