| No. |
Part Name |
Description |
Manufacturer |
| 1 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 2 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 3 |
A43L0616AV-5.5 |
5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
| 4 |
A43L2616V-7PH |
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM |
AMIC Technology |
| 5 |
A43L8316AV-7 |
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM |
AMIC Technology |
| 6 |
CY37064VP84-143JC |
3.3V, ISR high-performance CPLDs, 64 macrocells, 143MHz |
Cypress |
| 7 |
HY57V161610ETP-7I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 8 |
HY57V281620ALT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 9 |
HY57V281620AT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 10 |
HY57V281620HCLT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 11 |
HY57V281620HCLT-7I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 12 |
HY57V281620HCLTP-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 13 |
HY57V281620HCST-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 14 |
HY57V281620HCST-7I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 15 |
HY57V281620HCSTP-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 16 |
HY57V281620HCT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 17 |
HY57V281620HCT-7I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 18 |
HY57V281620HCTP-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 19 |
HY57V658020BTC-7I |
4Mbit x 2 bank x 8 SDRAM, LVTTL, 143MHz |
Hynix Semiconductor |
| 20 |
K4S641632C-TC70 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
| 21 |
K4S641632C-TL70 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
| 22 |
K4S643232H-TL70 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 143MHz |
Samsung Electronic |
| 23 |
KM416S4030CT-G7 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
| 24 |
KM44S16030CT-G_F7 |
143MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
| 25 |
KM48S8030CT-G_F7 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 143MHz |
Samsung Electronic |
| 26 |
T4312816A-7S |
143MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
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