| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE300CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 285.0 V(min), 315.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
1.5KE350C |
Transient voltage suppressor. 1500 W. Breakdown voltage 315.0 V(min), 385.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 3 |
1N4744 |
1 W silicon zener diode. Nominal zener voltage 15.0 V. |
Fairchild Semiconductor |
| 4 |
1N5245 |
500 mW silicon zener diode. Nominal zener voltage 15.0 V. |
Fairchild Semiconductor |
| 5 |
1N5535A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 15.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 6 |
1N5535B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 15.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 7 |
1N965 |
500 mW silicon planar zener diode. Max zener voltage 15.0 V. |
Fairchild Semiconductor |
| 8 |
BUK7M15-40H |
N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 |
Nexperia |
| 9 |
BUK9M15-40H |
N-channel 40 V, 15.0 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
| 10 |
CDBD1530A |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Common anode. |
Comchip Technology |
| 11 |
CDBD1530C |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Common cathod. |
Comchip Technology |
| 12 |
CDBD1530D |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Double. |
Comchip Technology |
| 13 |
CDBD1540A |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Common anode. |
Comchip Technology |
| 14 |
CDBD1540C |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Common cathod. |
Comchip Technology |
| 15 |
CDBD1540D |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Double. |
Comchip Technology |
| 16 |
CDBD1545A |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 45 V. Common anode. |
Comchip Technology |
| 17 |
CDBD1545C |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 45 V. Common cathod. |
Comchip Technology |
| 18 |
CDBD1545D |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 45 V. Double. |
Comchip Technology |
| 19 |
CDBD1550A |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Common anode. |
Comchip Technology |
| 20 |
CDBD1550C |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Common cathod. |
Comchip Technology |
| 21 |
CDBD1550D |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Double. |
Comchip Technology |
| 22 |
CDBD1560A |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 60 V. Common anode. |
Comchip Technology |
| 23 |
CDBD1560C |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 60 V. Common cathod. |
Comchip Technology |
| 24 |
CDBD1560D |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 60 V. Double. |
Comchip Technology |
| 25 |
GBPC15-005 |
50 V, 15.0 A glass passivated single phase bridge rectifier |
Surge Components |
| 26 |
GBPC15W-005 |
50 V, 15.0 A glass passivated single phase bridge rectifier |
Surge Components |
| 27 |
HMC232 |
GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz |
Hittite Microwave Corporation |
| 28 |
HMC398QS16G |
Ku-Band MMIC VCO with DIVIDE-BY-8, 14.0 - 15.0 GHz |
Hittite Microwave Corporation |
| 29 |
HMC410MS8G |
GaAs MMIC DOUBLE-BALANCED HIGH IP3 MIXER, 9.0 - 15.0 GHz |
Hittite Microwave Corporation |
| 30 |
HMC411MS8G |
GaAs MMIC SINGLE-BALANCED MIXER, 10.0 - 15.0 GHz |
Hittite Microwave Corporation |
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