| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1504-150E |
Delay 150 +/-7.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 2 |
150EBU02 |
200V 150A Ultra-Fast Discrete Diode in a PowIRtab package |
International Rectifier |
| 3 |
150EBU04 |
400V 150A Ultra-Fast Discrete Diode in a PowIRtab package |
International Rectifier |
| 4 |
1519-150E |
10-TAP DIP DELAY LINE TD/TR = 5 |
Data Delay Devices Inc |
| 5 |
15KPA150E3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 6 |
1N6150e3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 7 |
1N8150E3 |
Low Capacitance TVS |
Microsemi |
| 8 |
2RI150E |
POWER DIODE MODULE |
Fuji Electric |
| 9 |
30KPA150e3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 10 |
6RI150E |
POWER MODULE |
Fuji Electric |
| 11 |
ADXL150EM-1 |
±50g Single Axis Accelerometer with Analog Output |
Analog Devices |
| 12 |
ADXL150EM-3 |
±50g Single Axis Accelerometer with Analog Output |
Analog Devices |
| 13 |
ADXRS150EB |
Angular Rate Sensor ADXRS150 |
Analog Devices |
| 14 |
AM27C256-150EC |
256 Kilobit (32,768 x 8-Bit) CMOS EPROM |
Advanced Micro Devices |
| 15 |
AM27C256-150EI |
256 Kilobit (32/768 x 8-Bit) CMOS EPROM |
Advanced Micro Devices |
| 16 |
AM27F010-150EC |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory |
Advanced Micro Devices |
| 17 |
AM27F010-150ECB |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
Advanced Micro Devices |
| 18 |
AM27F010-150EE |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory |
Advanced Micro Devices |
| 19 |
AM27F010-150EEB |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
Advanced Micro Devices |
| 20 |
AM27F010-150EI |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory |
Advanced Micro Devices |
| 21 |
AM27F010-150EIB |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
Advanced Micro Devices |
| 22 |
AM28F010-150EC |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 23 |
AM28F010-150ECB |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 24 |
AM28F010-150EE |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 25 |
AM28F010-150EEB |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 26 |
AM28F010-150EI |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 27 |
AM28F010-150EIB |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 28 |
AM28F010A-150EC |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms |
Advanced Micro Devices |
| 29 |
AM28F010A-150ECB |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms |
Advanced Micro Devices |
| 30 |
AM28F010A-150EE |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms |
Advanced Micro Devices |
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