No. |
Part Name |
Description |
Manufacturer |
1 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
2 |
15110GOA |
Silicon Controlled Rectifier |
Microsemi |
3 |
15112GOA |
Silicon Controlled Rectifier |
Microsemi |
4 |
15116E |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
5 |
15116EI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
6 |
15116P |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
7 |
15116PI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
8 |
15116S |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
9 |
15116SI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
10 |
15116X |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
11 |
15116XI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
12 |
1N1511 |
Zener Diode 8.2V |
Motorola |
13 |
1N1511A |
Zener Diode 8.2V |
Motorola |
14 |
2722 162 01511 |
Octave Bandwidth Circulator/Isolator |
Philips |
15 |
2N1511 |
Silicon NPN Transistor |
Motorola |
16 |
2SA1511 |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
SANYO |
17 |
2SB1511 |
PNP Epitaxial Planar Silicon Transistors 30V/20A High-Current Switching Applications |
SANYO |
18 |
2SD1511 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
19 |
2SD1511G |
Silicon NPN epitaxial planar type darlington |
Panasonic |
20 |
5962-0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none |
Aeroflex Circuit Technology |
21 |
5962-0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none |
Aeroflex Circuit Technology |
22 |
5962D0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
23 |
5962D0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
24 |
5962L0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
25 |
5962L0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
26 |
5962P0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
27 |
5962P0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
28 |
AEP15112 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. |
Matsushita Electric Works(Nais) |
29 |
AEV15112 |
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact. |
Matsushita Electric Works(Nais) |
30 |
AN1511 |
ENSURING COMPATIBILITY BETWEEN M25P10 TO M25P10-A AND M25P05 TO M25P05-A IN YOUR APPLICATION |
SGS Thomson Microelectronics |
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