| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N415GM |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 2 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 3 |
ATF22V10B-15GM/883 |
High- Performance EE PLD |
Atmel |
| 4 |
MW4IC915 |
MW4IC915MBR1, MW4IC915GMBR1 GSM/GSM EDGE, N-CDMA, W-CDMA, 860-960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers |
Motorola |
| 5 |
MW4IC915GMBR1 |
GSM/GSM EDGE, N–CDMA, W–CDMA 860–960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Amplifier |
Freescale (Motorola) |
| 6 |
MW4IC915GMBR1 |
RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS |
Motorola |
| | | |
