No. |
Part Name |
Description |
Manufacturer |
1 |
1N4059 |
Temperature compensated Zener reference diode 16.8V |
Motorola |
2 |
1N4059 |
Diode Zener Single 16.8V 5% 1.5W 2-Pin Case CC |
New Jersey Semiconductor |
3 |
1N4059A |
Temperature compensated Zener reference diode 16.8V |
Motorola |
4 |
1N4059A |
Diode Zener Single 16.8V 5% 1.5W 2-Pin Case CC |
New Jersey Semiconductor |
5 |
1N4745 |
16.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
6 |
1N4745 |
1 W silicon zener diode. Nominal zener voltage 16.0 V. |
Fairchild Semiconductor |
7 |
1N4745A |
16.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
8 |
1N5143 |
Diode VAR Cap Single 60V 16.2pF 2-Pin DO-7 |
New Jersey Semiconductor |
9 |
1N5246 |
500 mW silicon zener diode. Nominal zener voltage 16.0 V. |
Fairchild Semiconductor |
10 |
1N5246B |
16.0V 500 mW Zener Diode |
Continental Device India Limited |
11 |
1N5536 |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-20% tolerance. |
Jinan Gude Electronic Device |
12 |
1N5536A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
13 |
1N5536B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
14 |
1N5536C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
15 |
1N5640 |
Diode TVS Single Uni-Dir 16.2V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
16 |
1N5741B |
16.0V Voltage Reference Diode |
Philips |
17 |
1N6114 |
Diode TVS Single Bi-Dir 16.7V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
18 |
1N6114A |
Diode TVS Single Bi-Dir 16.7V 500W 2-Pin |
New Jersey Semiconductor |
19 |
1N6150 |
Diode TVS Single Bi-Dir 16.7V 1.5KW 2-Pin |
New Jersey Semiconductor |
20 |
1N6150A |
Diode TVS Single Bi-Dir 16.7V 1.5KW 2-Pin |
New Jersey Semiconductor |
21 |
1N6278 |
Diode TVS Single Uni-Dir 16.2V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
22 |
1N6278C |
Diode TVS Single Bi-Dir 16.2V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
23 |
1N958 |
0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. +-20% tolerance. |
Jinan Gude Electronic Device |
24 |
1N958A |
7.5 V, 16.5 mA, silicon planar zener diode |
Honey Technology |
25 |
1N958A |
0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. +-10% tolerance. |
Jinan Gude Electronic Device |
26 |
1N958B |
7.5 V, 16.5 mA, silicon planar zener diode |
Honey Technology |
27 |
1N966 |
16.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
28 |
1N966 |
500 mW silicon planar zener diode. Max zener voltage 16.0 V. |
Fairchild Semiconductor |
29 |
1N966A |
16.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
30 |
1N966B |
16.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
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