| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4745 |
16.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 2 |
1N4745 |
1 W silicon zener diode. Nominal zener voltage 16.0 V. |
Fairchild Semiconductor |
| 3 |
1N4745A |
16.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 4 |
1N5246 |
500 mW silicon zener diode. Nominal zener voltage 16.0 V. |
Fairchild Semiconductor |
| 5 |
1N5246B |
16.0V 500 mW Zener Diode |
Continental Device India Limited |
| 6 |
1N5536 |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-20% tolerance. |
Jinan Gude Electronic Device |
| 7 |
1N5536A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 8 |
1N5536B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 9 |
1N5536C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 10 |
1N5741B |
16.0V Voltage Reference Diode |
Philips |
| 11 |
1N966 |
16.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 12 |
1N966 |
500 mW silicon planar zener diode. Max zener voltage 16.0 V. |
Fairchild Semiconductor |
| 13 |
1N966A |
16.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 14 |
1N966B |
16.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 15 |
20KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 16 |
20KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 17 |
274.031 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/32. Nominal resistance cold 16.0 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 18 |
2N3773 |
150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. |
Continental Device India Limited |
| 19 |
30KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 20 |
30KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 21 |
BSS131 |
Low Voltage MOSFETs - Small Signal MOSFET, 240V, SOT-23, RDSon=16.0 Ohm, 0.1A, LL |
Infineon |
| 22 |
C395-XB290-E400-A |
16.0mW; color:UV; 3.7-4.0V; Xbright InGaN LED |
CREE POWER |
| 23 |
C395-XB290-E400-B |
16.0mW; color:UV; 3.7-4.0V; Xbright InGaN LED |
CREE POWER |
| 24 |
CLL5246A |
16.0V Reference Grade 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 25 |
CLL5246B |
16.0V Reference Grade 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 26 |
CLL966A |
16.0V General Purpose 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 27 |
CMBZ5246B |
16.0V 300mW SMD Dual Zener Diode |
Continental Device India Limited |
| 28 |
DSC1001AI2-016.0000T |
Clock and Timing - Oscillators |
Microchip |
| 29 |
DSC1001AI5-016.0000 |
Clock and Timing - Oscillators |
Microchip |
| 30 |
DSC1001AI5-016.0000T |
Clock and Timing - Oscillators |
Microchip |
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