| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CDSU4148 |
Small Signal Switching Diodes, VRRM=100V, VR=75V, PD=150mW, IF=150mA - RevB116016 datasheet |
Comchip Technology |
| 2 |
MAX16016 |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 3 |
MAX16016LTBL+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 4 |
MAX16016LTBM+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 5 |
MAX16016LTBM+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 6 |
MAX16016LTBR+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 7 |
MAX16016LTBR+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 8 |
MAX16016LTBS+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 9 |
MAX16016LTBS+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 10 |
MAX16016LTBV+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 11 |
MAX16016LTBV+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 12 |
MAX16016PTBT+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 13 |
MAX16016PTBT+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 14 |
MAX16016PTBZ+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 15 |
MAX16016PTBZ+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| 16 |
MJ16016 |
Trans GP BJT NPN 450V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 17 |
NTE16016-ECG |
Polymetric positive temperature coefficient (PTC) resettable fuse. |
NTE Electronics |
| 18 |
PE160160-001 |
OUTLINE DIMENSION & BLOCK DIAGRAM |
Powertip Technology |
| 19 |
PE160160-001-P1 |
POWERTIP |
Powertip Technology |
| 20 |
PE160160-001-P2 |
POWERTIP |
Powertip Technology |
| 21 |
PG160160-B |
OUTLINE DIMENSION & BLOCK DIAGRAM |
Powertip Technology |
| 22 |
PG160160-C |
OUTLINE DIMENSION & BLOCK DIAGRAM |
Powertip Technology |
| 23 |
SG160160B |
GRAPHIC LCD MODULE display format: 160x160; module size: 88.8x88.8x9.4; viewing size: 62.0x62.0; dot size: 0.38x0.38; controller: S1D13305; |
SUNLIKE |
| 24 |
TM160160A |
GRAPHIC TYPE MONOCHROME LCD MODULE resolution: 160x160; module size: 89.2x85.0x9.0; viewing size: 62.0x62.0; dot pitch: 0.04x0.04; dot size: 0.34x0.34; controller: NONE; |
TIANMA Microelectronics |
| 25 |
TM160160B |
GRAPHIC TYPE MONOCHROME LCD MODULE resolution: 160x160; module size: 67.60x70.80x2.8; viewing size: 59.0x62.2; dot pitch: 0.345x0.365; dot size: 0.33x0.35; controller: NONE; |
TIANMA Microelectronics |
| 26 |
UPD4416016 |
16M-bit(1M-word x 16-bit) Fast SRAM |
NEC |
| 27 |
UPD4416016G5-A15-9JF |
16M-bit(1M-word x 16-bit) Fast SRAM |
NEC |
| 28 |
UPD4416016G5-A17-9JF |
16M-bit(1M-word x 16-bit) Fast SRAM |
NEC |
| 29 |
WG160160A |
LCD MODULE GRAPHIC 160 x 160 DOTS |
WINSTAR |
| 30 |
WG160160A |
GRAPHIC LCD MODULE display format: 160x160; module size: 69.0x69.0; viewing size: 60.0x60.0; dot size: 0.34x0.34; dot pitch: 0.38x0.38; controller: NONE; |
WSTAR |
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