| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BQ771612DPJR |
Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
| 2 |
BQ771612DPJT |
Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
| 3 |
K4E151612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 4 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 5 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 6 |
K4E171612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 7 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 8 |
K4E171612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 9 |
K4E641612D |
CMOS DRAM |
Samsung Electronic |
| 10 |
K4E661612D |
CMOS DRAM |
Samsung Electronic |
| 11 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 12 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 13 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 14 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 15 |
K4F151612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 16 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 17 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 18 |
K4F171612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 19 |
K4F171612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 20 |
K4F171612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 21 |
K4F661612D, K4F641612D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 22 |
K4F661612D, K4F641612D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 23 |
K4F661612D, K4F641612D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 24 |
K4F661612D, K4F641612D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 25 |
LDC1612DNTR |
2-channel, 28-bit Inductance-to-Digital Converter with I2C for Inductive Sensing 12-WSON -40 to 125 |
Texas Instruments |
| 26 |
LDC1612DNTT |
2-channel, 28-bit Inductance-to-Digital Converter with I2C for Inductive Sensing 12-WSON -40 to 125 |
Texas Instruments |
| 27 |
MAX11612DB+ |
Low-Power, 4-/8-/12-Channel, I²C, 12-Bit ADCs in Ultra-Small Packages |
MAXIM - Dallas Semiconductor |
| 28 |
REC10-1612DRWL |
10W DC/DC converter with 16V input, +-12/+-416mA output |
Recom International Power |
| 29 |
REC10-1612DRWLZ |
10W DC/DC converter with 16V input, +-12/+-416mA output |
Recom International Power |
| 30 |
REC15-1612DRWB |
15W DC/DC converter with 16V input, +-12/+-625mA output |
Recom International Power |
| | | |
