No. |
Part Name |
Description |
Manufacturer |
1 |
ADIS16405 |
ADIS16400/Silicon Anomaly |
Analog Devices |
2 |
ADIS16405 |
ADIS16400/Triaxial Inertial Sensor with Magnetometer Data Sheet (Rev B, 07/2009) |
Analog Devices |
3 |
HM5116405LS-5 |
16M EDO DRAM (4-Mword x 4-bit), 50ns |
Elpida Memory |
4 |
HM5116405LS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
5 |
HM5116405LS-7 |
16M EDO DRAM (4-Mword x 4-bit), 70ns |
Elpida Memory |
6 |
HM5116405LTS-5 |
16M EDO DRAM (4-Mword x 4-bit), 50ns |
Elpida Memory |
7 |
HM5116405LTS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
8 |
HM5116405LTS-7 |
16M EDO DRAM (4-Mword x 4-bit), 70ns |
Elpida Memory |
9 |
HM5116405S-5 |
16M EDO DRAM (4-Mword x 4-bit), 50ns |
Elpida Memory |
10 |
HM5116405S-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
11 |
HM5116405S-7 |
16M EDO DRAM (4-Mword x 4-bit), 70ns |
Elpida Memory |
12 |
HM5116405TS-5 |
16M EDO DRAM (4-Mword x 4-bit), 50ns |
Elpida Memory |
13 |
HM5116405TS-6 |
16M EDO DRAM (4-Mword x 4-bit), 60ns |
Elpida Memory |
14 |
HM5116405TS-7 |
16M EDO DRAM (4-Mword x 4-bit), 70ns |
Elpida Memory |
15 |
HYB3116405BJ-50 |
4M x 4 Bit 4k 3.3 V 50 ns EDO DRAM |
Infineon |
16 |
HYB3116405BJ-50 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
17 |
HYB3116405BJ-50 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
18 |
HYB3116405BJ-60 |
4M x 4 Bit 4k 3.3 V 60 ns EDO DRAM |
Infineon |
19 |
HYB3116405BJ-60 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
20 |
HYB3116405BJ-60 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
21 |
HYB3116405BJ-70 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
22 |
HYB3116405BJBTL-50 |
-3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
23 |
HYB3116405BJBTL-50 |
-3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
24 |
HYB3116405BJBTL-50 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
25 |
HYB3116405BT-50 |
4M x 4 Bit EDO DRAM 3.3 V 4k 50 ns |
Infineon |
26 |
HYB3116405BT-50 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
27 |
HYB3116405BT-50 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
28 |
HYB3116405BT-60 |
4M x 4 Bit EDO DRAM 3.3 V 4k 60 ns |
Infineon |
29 |
HYB3116405BT-60 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
30 |
HYB3116405BT-60 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
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