No. |
Part Name |
Description |
Manufacturer |
1 |
K4R271669B |
Direct RDRAM |
Samsung Electronic |
2 |
K4R271669B |
Direct RDRAM� Data Sheet |
Samsung Electronic |
3 |
K4R271669B-MCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
4 |
K4R271669B-MCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
5 |
K4R271669B-MCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
6 |
K4R271669B-N(M)CG6 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
7 |
K4R271669B-N(M)CK7 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
8 |
K4R271669B-NB(M)CCK8 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
9 |
K4R271669B-NCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
10 |
K4R271669B-NCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz |
Samsung Electronic |
11 |
K4R271669B-NCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz |
Samsung Electronic |
12 |
K4R441869B |
K4R271669B:Direct RDRAM� Data Sheet |
Samsung Electronic |
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