| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AQV216AX |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 600V, load current 50 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 2 |
AQW216AX |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Surface-mount terminal. Tape and reel packing style. |
Matsushita Electric Works(Nais) |
| 3 |
CD216AXXX |
Lead free versions available, RoHS compliant (lead free version), Low profile, Surface mount, Very low forward voltage drop |
BOURNS |
| 4 |
FAN1616AX18 |
0.5A Adjustable/Fixed Low Dropout Linear Regulator |
Fairchild Semiconductor |
| 5 |
FAN1616AX25 |
0.5A Adjustable/Fixed Low Dropout Linear Regulator |
Fairchild Semiconductor |
| 6 |
FAN1616AX33 |
0.5A Adjustable/Fixed Low Dropout Linear Regulator |
Fairchild Semiconductor |
| 7 |
FAN1616AX5 |
0.5A Adjustable/Fixed Low Dropout Linear Regulator |
Fairchild Semiconductor |
| 8 |
GS74116AX-10 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 9 |
GS74116AX-10I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 10 |
GS74116AX-10IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 11 |
GS74116AX-10T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 12 |
GS74116AX-12 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 13 |
GS74116AX-12I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 14 |
GS74116AX-12IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 15 |
GS74116AX-12T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 16 |
GS74116AX-7 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 17 |
GS74116AX-7I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 18 |
GS74116AX-7IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 19 |
GS74116AX-7T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 20 |
GS74116AX-8 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 21 |
GS74116AX-8I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 22 |
GS74116AX-8IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 23 |
GS74116AX-8T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 24 |
ISD1016AX |
Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations |
etc |
| 25 |
ISD1016AX |
Single-chip voice record/playback device 16-second durations |
Information Storage Devices |
| 26 |
MAX9616AXA+ |
Low-Power Single/Dual, Rail-to-Rail Op Amps |
MAXIM - Dallas Semiconductor |
| 27 |
MAX9616AXA+T |
Low-Power Single/Dual, Rail-to-Rail Op Amps |
MAXIM - Dallas Semiconductor |
| 28 |
TC51WHM516AXBN |
SRAM - Pseudo SRAM |
TOSHIBA |
| 29 |
TC51WHM516AXBN65 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
| 30 |
TC51WHM516AXBN70 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
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