No. |
Part Name |
Description |
Manufacturer |
1 |
16C2850 |
DUAL UART WITH 128-byte FIFOs AND RS-485 HALF DUPLEX CONTROL |
Exar |
2 |
16C2852 |
Dual UART with TX and RX FIFO Counters |
Exar |
3 |
489D106X016C20V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
4 |
489D685X016C20V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
5 |
BXY16C2 |
Silicon charge storage varactors for frequency multiplication |
Siemens |
6 |
BXY16C2 |
Example of a frequency multiplier chain with storage varactors, datasheet in german language |
Siemens |
7 |
F16C20 |
POWER RECTIFIERS(16A,50-200V) |
MOSPEC Semiconductor |
8 |
H16C20 |
HIGH EFFICIENCY RECTIFIERS(16A,50-200V) |
MOSPEC Semiconductor |
9 |
HZ16C2 |
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
Hitachi Semiconductor |
10 |
KM416C254D |
256K x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
11 |
KM416C254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
12 |
KM416C254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
13 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
14 |
KM416C254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh |
Samsung Electronic |
15 |
KM416C254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
16 |
KM416C254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
17 |
KM416C254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
18 |
KM416C254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
19 |
KM416C254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
20 |
KM416C254DTL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh |
Samsung Electronic |
21 |
KM416C254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
22 |
KM416C254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
23 |
KM416C256D |
256K x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
24 |
KM416C256DJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V |
Samsung Electronic |
25 |
KM416C256DJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V |
Samsung Electronic |
26 |
KM416C256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V |
Samsung Electronic |
27 |
KM416C256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability |
Samsung Electronic |
28 |
KM416C256DLJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability |
Samsung Electronic |
29 |
KM416C256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
30 |
KM416C256DLT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability |
Samsung Electronic |
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