| No. |
Part Name |
Description |
Manufacturer |
| 1 |
16C450 |
UNIVERSAL ASYNCHRONOUS RECEIVER/TRANSMITTER (UART) |
Exar |
| 2 |
EI16C450 |
Universal Asynchronous Receiver |
IMP Inc |
| 3 |
F16C40 |
POWER RECTIFIERS(16A,300-600V) |
MOSPEC Semiconductor |
| 4 |
H16C40 |
HIGH EFFICIENCY RECTIFIERS(16A,300-600V) |
MOSPEC Semiconductor |
| 5 |
HB289016C4 |
Compact Flash |
Hitachi Semiconductor |
| 6 |
KM416C4000B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 7 |
KM416C4000BS-45 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 45ns |
Samsung Electronic |
| 8 |
KM416C4000BS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns |
Samsung Electronic |
| 9 |
KM416C4000BS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns |
Samsung Electronic |
| 10 |
KM416C4000C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 11 |
KM416C4000CS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns |
Samsung Electronic |
| 12 |
KM416C4000CS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns |
Samsung Electronic |
| 13 |
KM416C4004C |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 14 |
KM416C4004CS-5 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns |
Samsung Electronic |
| 15 |
KM416C4004CS-6 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 60ns |
Samsung Electronic |
| 16 |
KM416C4100B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 17 |
KM416C4100BS-45 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 45ns |
Samsung Electronic |
| 18 |
KM416C4100BS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 50ns |
Samsung Electronic |
| 19 |
KM416C4100BS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns |
Samsung Electronic |
| 20 |
KM416C4100C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 21 |
KM416C4100CS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 50ns |
Samsung Electronic |
| 22 |
KM416C4100CS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns |
Samsung Electronic |
| 23 |
KM416C4104C |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 24 |
KM416C4104CS-5 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 50ns |
Samsung Electronic |
| 25 |
KM416C4104CS-6 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 60ns |
Samsung Electronic |
| 26 |
PAL10016C4-2VC |
100K, 2 ns ECL ASPECT programmable array logic |
National Semiconductor |
| 27 |
PAL1016C4-2VC |
10KH, 2 ns ECL ASPECT programmable array logic |
National Semiconductor |
| 28 |
PIC16C432 |
This powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS OTP-based 8-bit microcontroller packs Microchip's powerful PIC architecture into an 20-pin package which features 2 Comparator |
Microchip |
| 29 |
PIC16C432-E/SS |
This powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
| 30 |
PIC16C432-I/SS |
This powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
| | | |
