| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
| 2 |
HMC216MS8 |
GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz |
Hittite Microwave Corporation |
| 3 |
HMC316MS8 |
GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 1.5 - 3.5 GHz |
Hittite Microwave Corporation |
| 4 |
ISD4004-16MS |
Single-Chip Voice Record/Playback Devices 8-/ 10-/ 12-/ and 16-Minute Durations |
Winbond Electronics |
| 5 |
ISD4004-16MSI |
Single-Chip Voice Record/Playback Devices 8-/ 10-/ 12-/ and 16-Minute Durations |
Winbond Electronics |
| 6 |
KM416C1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 7 |
KM416C1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 8 |
KM416C1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 9 |
KM416C1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 10 |
KM416C1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 11 |
KM416V1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 12 |
KM416V1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 13 |
KM416V1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 14 |
KM416V1204CT-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 15 |
KM416V1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 16 |
KM416V1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 17 |
KM41C4000DJ-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns |
Samsung Electronic |
| 18 |
KM41C4000DJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns |
Samsung Electronic |
| 19 |
KM41C4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns |
Samsung Electronic |
| 20 |
KM41C4000DT-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns |
Samsung Electronic |
| 21 |
KM41C4000DT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns |
Samsung Electronic |
| 22 |
KM41C4000DT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns |
Samsung Electronic |
| 23 |
KM41V4000DJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 60ns |
Samsung Electronic |
| 24 |
KM41V4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 70ns |
Samsung Electronic |
| 25 |
KM41V4000DT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 60ns |
Samsung Electronic |
| 26 |
KM41V4000DT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 70ns |
Samsung Electronic |
| 27 |
SD150N16MSV |
Standard recovery diode |
International Rectifier |
| 28 |
SD150R16MSV |
Standard recovery diode |
International Rectifier |
| 29 |
SD200N16MSV |
Standard recovery diode |
International Rectifier |
| 30 |
SD200R16MSV |
Standard recovery diode |
International Rectifier |
| | | |
