| No. |
Part Name |
Description |
Manufacturer |
| 1 |
KM416V254D |
256K x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 2 |
KM416V254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
| 3 |
KM416V254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
| 4 |
KM416V254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 5 |
KM416V254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
| 6 |
KM416V254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
| 7 |
KM416V254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
| 8 |
KM416V254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
| 9 |
KM416V254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
| 10 |
KM416V254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 11 |
KM416V254DTL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
| 12 |
KM416V254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
| 13 |
KM416V254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
| 14 |
KM416V256D |
256K x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 15 |
KM416V256DJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V |
Samsung Electronic |
| 16 |
KM416V256DJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V |
Samsung Electronic |
| 17 |
KM416V256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V |
Samsung Electronic |
| 18 |
KM416V256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 19 |
KM416V256DLJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 20 |
KM416V256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 21 |
KM416V256DLT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 22 |
KM416V256DLT-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 23 |
KM416V256DLT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 24 |
KM416V256DT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V |
Samsung Electronic |
| 25 |
KM416V256DT-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V |
Samsung Electronic |
| 26 |
KM416V256DT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V |
Samsung Electronic |
| 27 |
KM4216V256 |
256K X 16 BIT CMOS VIDEO RAM |
Samsung Electronic |
| 28 |
STEVAL-IFP016V2 |
IO-Link communication master transceiver demonstration board based on the L6360 |
ST Microelectronics |
| 29 |
STEVAL-ILL016V2 |
New 15 W offline TRIAC dimmable LED driver based on L6562AD and TSM1052 (USA Market - 115 V) |
ST Microelectronics |
| 30 |
uPC1216V2 |
µPC1216V2 AM tuner silicon bipolar monolithic integrated circuit |
NEC |
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