| No. |
Part Name |
Description |
Manufacturer |
| 1 |
117 ASD |
Aluminum Capacitors, Axial, Smallest Diameter |
Vishay |
| 2 |
2SD757 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
Hitachi Semiconductor |
| 3 |
2SD758 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
Hitachi Semiconductor |
| 4 |
7262 |
T-1 subminiature, bi-pin lamp. 5.0 volts, 0.017 amps. |
Gilway Technical Lamp |
| 5 |
8602 |
T-1 subminiature, wire lead lamp. 5.0 volts, 0.017 amps. |
Gilway Technical Lamp |
| 6 |
8605 |
T-1 subminiature, miniature flanged lamp. 5.0 volts, 0.017 amps. |
Gilway Technical Lamp |
| 7 |
IRF6706S2 |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 17 amperes optimized with low on resistance. |
International Rectifier |
| 8 |
IRF6706S2TR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 17 amperes optimized with low on resistance. |
International Rectifier |
| 9 |
IRF6706S2TRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 17 amperes optimized with low on resistance. |
International Rectifier |
| 10 |
IRF6712S |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 17 amperes optimized with low on resistance. |
International Rectifier |
| 11 |
IRF6712STR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 17 amperes optimized with low on resistance. |
International Rectifier |
| 12 |
IRF6712STRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 17 amperes optimized with low on resistance. |
International Rectifier |
| 13 |
MAX117EVKIT-DIP |
Evaluation Kit for the MAX117 and MAX118 |
MAXIM - Dallas Semiconductor |
| 14 |
MAX9217EVKIT |
Evaluation Kit for the MAX9217 and MAX9218 |
MAXIM - Dallas Semiconductor |
| 15 |
MAX9217EVKIT+ |
Evaluation Kit for the MAX9217 and MAX9218 |
MAXIM - Dallas Semiconductor |
| 16 |
MAX9218EVKIT |
Evaluation Kit for the MAX9217 and MAX9218 |
MAXIM - Dallas Semiconductor |
| 17 |
MAX9218EVKIT+ |
Evaluation Kit for the MAX9217 and MAX9218 |
MAXIM - Dallas Semiconductor |
| 18 |
NTB5605P |
Power MOSFET 60 V, 17 A, P-Channel D<sup>2</sup>PAK |
ON Semiconductor |
| 19 |
NTB5605PT4 |
Power MOSFET 60 V, 17 A, P-Channel D<sup>2</sup>PAK |
ON Semiconductor |
| 20 |
NTD4804N |
Power MOSFET, 30 V, 117 A, Single N-Channel |
ON Semiconductor |
| 21 |
NTD6416AN |
Power MOSFET, N-Channel, 100 V, 17 A, 81 mΩ |
ON Semiconductor |
| 22 |
NTMFS4707N |
Power MOSFET 30 V, 17 A, Single N-Channel SO-8 Flat Lead |
ON Semiconductor |
| 23 |
NTMFS4898NF |
Power MOSFET, 30 V, 117 A, Single N-Channel |
ON Semiconductor |
| 24 |
NTMS4920N |
Power MOSFET, 30 V, 17 A, N-Channel |
ON Semiconductor |
| 25 |
NVMFD5877NL |
Power MOSFET, 60 V, 17 A, 39 mΩ, Dual N-Channel, Logic Level |
ON Semiconductor |
| 26 |
STB18NF25 |
N-channel 250 V, 0.14 Ohm, 17 A low gate charge STripFET(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
| 27 |
STB18NM80 |
N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 28 |
STB21N65M5 |
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in D2PAK |
ST Microelectronics |
| 29 |
STB21NK50Z |
N-channel 500 V - 0.23 Y - 17 A - D2PAK Zener-protected superMESHTM MOSFET |
ST Microelectronics |
| 30 |
STB21NM60ND |
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK package |
ST Microelectronics |
| | | |
