| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE130C |
Transient voltage suppressor. 1500 W. Breakdown voltage 117.0 V(min), 143 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
1N5247 |
500 mW silicon zener diode. Nominal zener voltage 17.0 V. |
Fairchild Semiconductor |
| 3 |
1N5247B |
17.0V 500 mW Zener Diode |
Continental Device India Limited |
| 4 |
1N5537A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 17.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 5 |
1N5537B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 17.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 6 |
1N751 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 7 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 8 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 9 |
APT6040BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm |
Advanced Power Technology |
| 10 |
APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm |
Advanced Power Technology |
| 11 |
C405-XB290-E400-A |
17.0mW; color:UV; 3.7-4.0V; Xbright InGaN LED |
CREE POWER |
| 12 |
C405-XB290-E400-B |
17.0mW; color:UV; 3.7-4.0V; Xbright InGaN LED |
CREE POWER |
| 13 |
CLL5247A |
17.0V Reference Grade 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 14 |
CLL5247B |
17.0V Reference Grade 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 15 |
CMBZ5247B |
17.0V 300mW SMD Dual Zener Diode |
Continental Device India Limited |
| 16 |
DSC1121CI5-117.0000 |
Clock and Timing - Oscillators |
Microchip |
| 17 |
DSC1121CI5-117.0000T |
Clock and Timing - Oscillators |
Microchip |
| 18 |
JPS250PS12 |
Switching power supply. Max. power 250 W. Output voltage 12 V. Output current: 21.0 A (with 18 CFM); 17.0 A (convection cooled). |
International Power Sources |
| 19 |
JPS250PS12C |
Switching power supply. Max. power 250 W. Output voltage 12 V. Output current: 21.0 A (with 18 CFM); 17.0 A (convection cooled). |
International Power Sources |
| 20 |
JPS250PS15 |
Switching power supply. Max. power 250 W. Output voltage 15 V. Output current: 17.0 A (with 18 CFM); 13.5 A (convection cooled). |
International Power Sources |
| 21 |
JPS250PS15C |
Switching power supply. Max. power 250 W. Output voltage 15 V. Output current: 17.0 A (with 18 CFM); 13.5 A (convection cooled). |
International Power Sources |
| 22 |
KR-1700AUL |
Nominal capacity: 1700mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 17.0mOhm cadnica |
SANYO |
| 23 |
LM170E01 |
17.0 SXGA TFT LCD |
Philips |
| 24 |
LM170E01-A4 |
17.0 SXGA TFT LCD |
Philips |
| 25 |
MMBZ5247B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 17.0 V. Test current 7.4 mA. |
Chenyi Electronics |
| 26 |
MMBZ5247B |
Surface mount zener diode. Nominal zener voltage 17.0V, test current 7.4mA. |
Jinan Gude Electronic Device |
| 27 |
NTE145A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 15V. Zener test current Izt = 17.0mA. |
NTE Electronics |
| 28 |
NTE5259AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 17.0V. Zener test current Izt = 740mA. |
NTE Electronics |
| 29 |
P6KE130C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 117.0 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 30 |
SC4004B |
CHARACTER LCD MODULE display format: 40x4; module size: 288.3x77.5x17.0; viewing size: 260.0x56.6; character size: 5.16x10.52; dot size: 1.00x1.28; |
SUNLIKE |
| | | |
