| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4170B |
Zener Diode 22V 1W |
Motorola |
| 2 |
1N4170B |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 3 |
1N4170B |
ZENER DIODES |
Unknow |
| 4 |
2-GD170B |
Germanium PNP Power Transistor |
RFT |
| 5 |
2SC1170B |
Silicon NPN triple diffused MESA transistor, color TV Horizontal Output Applications |
TOSHIBA |
| 6 |
A170B |
200V, 100A general purpose single diode |
Powerex Power Semiconductors |
| 7 |
AD5170BRM10 |
256-Position, Two-Time Programmable, I2C Compatible Digital Potentiometer |
Analog Devices |
| 8 |
AD5170BRM10-RL7 |
256-Position, Two-Time Programmable, I2C Compatible Digital Potentiometer |
Analog Devices |
| 9 |
AD5170BRM100 |
256-Position, Two-Time Programmable, I2C Compatible Digital Potentiometer |
Analog Devices |
| 10 |
AD5170BRM100-RL7 |
256-Position, Two-Time Programmable, I2C Compatible Digital Potentiometer |
Analog Devices |
| 11 |
AD5170BRM2.5 |
256-Position, Two-Time Programmable, I2C Compatible Digital Potentiometer |
Analog Devices |
| 12 |
AD5170BRM2.5-RL7 |
256-Position, Two-Time Programmable, I2C Compatible Digital Potentiometer |
Analog Devices |
| 13 |
AD5170BRM50 |
256-Position, Two-Time Programmable, I2C Compatible Digital Potentiometer |
Analog Devices |
| 14 |
AD5170BRM50-RL7 |
256-Position, Two-Time Programmable, I2C Compatible Digital Potentiometer |
Analog Devices |
| 15 |
APT10SCE170B |
SiC Schottky Diodes |
Microsemi |
| 16 |
APT5SM170B |
SiC MOSFET |
Microsemi |
| 17 |
APTGT50X170BTP3 |
3 Phase Bridge + Input Rectifier Bridge + Brake + NTC - IGBT |
Advanced Power Technology |
| 18 |
ATV02W170B-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=200Watts, VRWM=17V, Tolerance=5% |
Comchip Technology |
| 19 |
B170B |
Schottky Rectifiers |
Diodes |
| 20 |
B170B |
1A high voltage schottky barrier rectifier, 70V |
TRANSYS Electronics Limited |
| 21 |
B170B-13-F |
Schottky Rectifiers |
Diodes |
| 22 |
BC170B |
Silicon NPN Epitaxial-Planar AF Transistor |
IPRS Baneasa |
| 23 |
BC170B |
Si-PLANAR-npn TRANSISTOR h21E=β=60...250 at 1mA |
IPRS Baneasa |
| 24 |
BC170B |
Silicon NPN Planar Transistor (in german) |
ITT Semiconductors |
| 25 |
BLF8G19LS-170BV |
Power LDMOS transistor |
NXP Semiconductors |
| 26 |
FU-68PDF-V510M170B |
1.58 um (L-Band) DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 27 |
FU-68PDF-V520M170B |
1.58 um (L-Band) DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 28 |
FU-68SDF-V802M170B |
1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 29 |
FU-68SDF-V810M170B |
1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 30 |
GD170B |
Germanium PNP Power Transistor |
RFT |
| | | |
