| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1V115 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 171 V @ 1mA DC test current. |
NTE Electronics |
| 2 |
2V115 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 171 V @ 1mA DC test current. |
NTE Electronics |
| 3 |
BZW04-171 |
171 V, 1 mA, 1 W, glass passivated junction transient voltage suppressor |
General Instruments |
| 4 |
CZRM27C160PA |
0.8W surface mount zener diode. Vzmin 153 V, Vzmax 171 V, 1%. |
Comchip Technology |
| 5 |
CZRM27C160PB |
0.8W surface mount zener diode. Vzmin 153 V, Vzmax 171 V, 2%. |
Comchip Technology |
| 6 |
CZRM27C160PC |
0.8W surface mount zener diode. Vzmin 153 V, Vzmax 171 V, 5%. |
Comchip Technology |
| 7 |
IR2171 |
IR2171 is not recommended for new designs. We recommend the IR2175 for new designs. |
International Rectifier |
| 8 |
NTMFS4897NF |
Power MOSFET, 30 V, 171 A, Single N−Channel |
ON Semiconductor |
| 9 |
P4KE180A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 10 |
P4KE180CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 11 |
P6KE180CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 12 |
PBZW04P171 |
171 V, 1 mA, 1 W, glass passivated junction transient voltage suppressor |
General Instruments |
| 13 |
RFFM6500 |
168 - 171 MHz, 2.7 - 4.2 V, 0.5 Watt ISM Band Transmit / Receive Module |
Qorvo |
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