No. |
Part Name |
Description |
Manufacturer |
1 |
114-90-624-41-117161 |
Dual-in-line sockets and headers / open frame / surface mount pick and place |
Precid-Dip Durtal |
2 |
114-91-624-41-117161 |
Dual-in-line sockets and headers / open frame / surface mount pick and place |
Precid-Dip Durtal |
3 |
114-Z1-624-41-117161 |
Dual-in-line sockets and headers / open frame / surface mount pick and place |
Precid-Dip Durtal |
4 |
1N1716 |
Silicon Epitaxial Planar Z-Diodes |
Vishay |
5 |
2N1716 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
6 |
2N1716 |
Silicon NPN Transistor |
Motorola |
7 |
2N1716 |
Trans GP BJT NPN 3-Pin TO-5 |
New Jersey Semiconductor |
8 |
2N1716 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
9 |
ADP1716 |
500mA Low-Dropout Linear Regulator with Tracking |
Analog Devices |
10 |
BC81716 |
SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
11 |
BC81716LT1 |
CASE 318-08, STYLE 6 SOT-23 (TO-236AB) |
Motorola |
12 |
BC81716MTF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
13 |
DEM-PCM1716, DEM-DAI1716, DEM-PCM1716-1, |
EVALUATION FIXTURE |
Burr Brown |
14 |
DEM-PCM1716, DEM-DAI1716, DEM-PCM1716-1, |
EVALUATION FIXTURE |
Burr Brown |
15 |
DEM-PCM1716, DEM-DAI1716, DEM-PCM1716-1, |
EVALUATION FIXTURE |
Burr Brown |
16 |
IDT72V17160 |
16K x 16 Multimedia FIFO, 3.3V |
IDT |
17 |
IDT72V17160L10PFI |
16K x 16 Multimedia FIFO, 3.3V |
IDT |
18 |
IDT72V17160L10PFI8 |
16K x 16 Multimedia FIFO, 3.3V |
IDT |
19 |
IR21716S |
IR2171S is not recommended for new designs. We recommend the IR2175S for new designs. |
International Rectifier |
20 |
K4E171611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
21 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
22 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
23 |
K4E171612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
24 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
25 |
K4E171612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
26 |
K4F171611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
27 |
K4F171611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
28 |
K4F171611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
29 |
K4F171612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
30 |
K4F171612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
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