| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP100 |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |
Panjit International Inc |
| 2 |
15KP100C |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |
Panjit International Inc |
| 3 |
HDSP-2179 |
HDSP-2179 · Eight Char 5.0 mm (0.2 inch) Glass/Ceramic Smart 5 x 7 Alphanumeric Displays for Military Apps |
Agilent (Hewlett-Packard) |
| 4 |
P4KE170A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5 |
P4KE170CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6 |
P6KE170CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 7 |
UPA827 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD |
NEC |
| 8 |
UPA827TF |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD |
NEC |
| 9 |
UPA827TF-T1 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD |
NEC |
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