| No. |
Part Name |
Description |
Manufacturer |
| 1 |
11691D |
11691D Coaxial Directional Coupler, 2 GHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 2 |
11692D |
11692D Coaxial Dual-Directional Coupler, 2 GHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 3 |
1457 |
Bulk Metal Foil Technology, 18 Pin Dual-In-Line Hermetic Resistor Network |
Vishay |
| 4 |
1504-360E |
Delay 360 +/-18 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 5 |
1504-360F |
Delay 360 +/-18 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 6 |
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor |
GHz Technology |
| 7 |
18 DIP |
Package Dimensions |
Samsung Electronic |
| 8 |
18 ZIP |
18ZIP Package Dimensions |
Samsung Electronic |
| 9 |
1G-118 |
1G118 ceramic outline |
Transitron Electronic |
| 10 |
1G-118 EPOXY |
TRANSITRON 1G118 EPOXY OUTLINE |
Transitron Electronic |
| 11 |
1G-118 EPOXY |
TRANSITRON 1G118 EPOXY OUTLINE |
Transitron Electronic |
| 12 |
1N4118 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 13 |
1N4118 (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
| 14 |
1N4618 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 15 |
1N4618 (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
| 16 |
1N4746 |
18 V, 1 W silicon zener diode |
BKC International Electronics |
| 17 |
1N4746 |
1 WATT, 18 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 18 |
1N4746A |
18 V, 1 W silicon zener diode |
BKC International Electronics |
| 19 |
1N4746A |
Voltage regulator diode. Working voltage (nom) 18 V . |
Philips |
| 20 |
1N4746A |
18 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 21 |
1N5248 |
500mW, 18 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 22 |
1N5248A |
18 V, 7.0 mA, zener diode |
Leshan Radio Company |
| 23 |
1N5248AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 18 V. Tolerance +-10%. |
Microsemi |
| 24 |
1N5248BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 18 V. Tolerance +-5%. |
Microsemi |
| 25 |
1N5248C |
18 V, 7.0 mA, zener diode |
Leshan Radio Company |
| 26 |
1N5248D |
18 V, 7.0 mA, zener diode |
Leshan Radio Company |
| 27 |
1N5248UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 18 V. |
Microsemi |
| 28 |
1N5355B |
18 V, 65 mA, 5 W glass passivated zener diode |
Fagor |
| 29 |
1N5355B |
18 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 30 |
1N5931B |
18 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
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