| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1SR18-400 |
Silicon rectifier diode - center-tapped type |
Shindengen |
| 2 |
BC808-40 |
0.250W General Purpose PNP SMD Transistor. 25V Vceo, 0.500A Ic, 250 - 600 hFE. Complementary BC818-40 |
Continental Device India Limited |
| 3 |
BC818-40 |
0.250W General Purpose NPN SMD Transistor. 25V Vceo, 0.500A Ic, 250 - 600 hFE. Complementary BC818-40 |
Continental Device India Limited |
| 4 |
BC818-40 |
0.250W General Purpose NPN SMD Transistor. 25V Vceo, 0.500A Ic, 250 - 600 hFE. Complementary BC818-40 |
Continental Device India Limited |
| 5 |
BC818-40 |
Surface mount Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 6 |
BC818-40 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 7 |
BC818-40 |
Small Signal Transistor (NPN) |
General Semiconductor |
| 8 |
BC818-40 |
General Purpose Transistors - NPN Silicon AF Transistor for general AF applications |
Infineon |
| 9 |
BC818-40 |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 10 |
BC818-40 |
NPN Silicon AF Transistors |
Siemens |
| 11 |
BC818-40 |
Transistors, RF & AF |
Vishay |
| 12 |
BC818-40 |
SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
| 13 |
BC818-40LT1 |
General Purpose NPN Silicon Transistor |
ON Semiconductor |
| 14 |
BC818-40W |
General Purpose Transistors - NPN Silicon AF Transistor for general AF applications |
Infineon |
| 15 |
BC818-40W |
NPN general purpose transistor |
Philips |
| 16 |
BC818-40W |
NPN Silicon AF Transistor (For general AF applications High collector current High current gain) |
Siemens |
| 17 |
BTW18-400 |
Bi-Directional Triode Thyristor (TRIAC) |
Transitron Electronic |
| 18 |
BTX18-400 |
SILICON THYRISTORS |
Comset Semiconductors |
| 19 |
BTX18-400 |
Thyristor |
mble |
| 20 |
BTX18-400 |
Thyristors and stacks thyristors |
Mullard |
| 21 |
BTX18-400 |
Silicon Thyristors 400V |
Philips |
| 22 |
BUK6218-40C |
N-channel TrenchMOS intermediate level FET |
Nexperia |
| 23 |
BUK6218-40C |
N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
| 24 |
BUK7K18-40E |
Dual N-channel 40 V, 19 mΩ standard level MOSFET |
Nexperia |
| 25 |
BUK7K18-40E |
Dual N-channel 40 V, 19 mΩ standard level MOSFET |
NXP Semiconductors |
| 26 |
BUK9K18-40E |
Dual N-channel 40 V, 19.5 mΩ logic level MOSFET |
Nexperia |
| 27 |
BUK9K18-40E |
Dual N-channel 40 V, 19.5 mΩ logic level MOSFET |
NXP Semiconductors |
| 28 |
BYV118-40 |
Rectifier diodes Schottky barrier |
Philips |
| 29 |
CY7C1143KV18-400BZI |
18-Mbit QDR� II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) |
Cypress |
| 30 |
CY7C1145KV18-400BZXC |
18-Mbit QDR� II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) |
Cypress |
| | | |
