| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE440CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 418.0 V(min), 462.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
1N4746 |
18.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 3 |
1N4746 |
1 W silicon zener diode. Nominal zener voltage 18.0 V. |
Fairchild Semiconductor |
| 4 |
1N4746A |
18.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 5 |
1N5248 |
500 mW silicon zener diode. Nominal zener voltage 18.0 V. |
Fairchild Semiconductor |
| 6 |
1N5248B |
18.0V 500 mW Zener Diode |
Continental Device India Limited |
| 7 |
1N5538A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 8 |
1N5538B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 9 |
1N5538C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 10 |
1N5538D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 11 |
1N5742B |
18.0V Voltage Reference Diode |
Philips |
| 12 |
1N6378 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 13 |
1N6386 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 14 |
1N967 |
18.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 15 |
1N967 |
500 mW silicon planar zener diode. Max zener voltage 18.0 V. |
Fairchild Semiconductor |
| 16 |
1N967A |
18.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 17 |
1N967B |
18.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 18 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 19 |
346 |
T-1 3/4 subminiature, miniature grooved lamp. 18.0 volts, 0.04 amps. |
Gilway Technical Lamp |
| 20 |
370 |
T-1 3/4 subminiature, miniature flanged lamp. 18.0 volts, 0.04 amps. |
Gilway Technical Lamp |
| 21 |
7220 |
T-1 subminiature, wire lead lamp. 18.0 volts, 0.026 amps. |
Gilway Technical Lamp |
| 22 |
7241 |
T-1 subminiature, miniature flanged lamp. 18.0 volts, 0.026 amps. |
Gilway Technical Lamp |
| 23 |
7370 |
T-1 3/4 subminiature, bi-pin lamp. 18.0 volts, 0.04 amps. |
Gilway Technical Lamp |
| 24 |
8099 |
T-1 subminiature, bi-pin lamp. 18.0 volts, 0.026 amps. |
Gilway Technical Lamp |
| 25 |
8536 |
T-1 3/4 subminiature, midget screw lamp. 18.0 volts, 0.04 amps. |
Gilway Technical Lamp |
| 26 |
APL1001J |
POWER MOS IV 1000V 18.0A 0.60 Ohm |
Advanced Power Technology |
| 27 |
APL1001P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000V 18.0A 0.60OHM |
Advanced Power Technology |
| 28 |
APT6040BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm |
Advanced Power Technology |
| 29 |
APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm |
Advanced Power Technology |
| 30 |
AUIRF7675M2 |
150V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 18.0 amperes optimized with low on resistance. |
International Rectifier |
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