| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1K2S-N003 |
Input voltage 200-260 VAC;output voltage 3.3 VDC;output current:180 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 2 |
1K2S-N005 |
Input voltage 200-260 VAC;output voltage 5 VDC;output current:180 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 3 |
AR2004LTS26 |
2600 V, 3180 A, 33.6 kA rectifier diode |
POSEICO SPA |
| 4 |
AR749LTS25 |
2500 V, 5180 A, 70 kA rectifier diode |
POSEICO SPA |
| 5 |
HS18515R |
180 Amp schottky ORing rectifier. Repetitive peak reverse voltage 15V. |
Microsemi |
| 6 |
IRF6628 |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 7 |
IRF6628TR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 8 |
IRF6628TRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 9 |
IRF6629 |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 10 |
IRF6629TR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 11 |
IRF6629TRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 12 |
IRF6635TR1 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 13 |
IRF6635TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 14 |
IRF6638 |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 15 |
IRF6638TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 16 |
IRF6638TRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 17 |
IRF6691TR1 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 18 |
IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 19 |
PB-IRF6635 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 20 |
PB-IRF6638 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 21 |
PB-IRF6691 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 22 |
RTP315N10F7 |
Aerospace and defence N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package |
ST Microelectronics |
| 23 |
STH180N10F3-2 |
N-channel 100 V, 3.9 mOhm, 180 A STripFET(TM)III Power MOSFET H2PAK-2 |
ST Microelectronics |
| 24 |
STH180N10F3-6 |
N-channel 100 V, 3.9 mOhm, 180 A, H2PAK-6 STripFET(TM) III Power MOSFET |
ST Microelectronics |
| 25 |
STH185N10F3-2 |
Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET(TM) III Power MOSFET H2PAK-2 package |
ST Microelectronics |
| 26 |
STH210N75F6-2 |
N-channel 75 V, 0.0027 Ohm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 27 |
STH240N10F7-2 |
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package |
ST Microelectronics |
| 28 |
STH240N10F7-6 |
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package |
ST Microelectronics |
| 29 |
STH240N75F3-2 |
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 30 |
STH240N75F3-6 |
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package |
ST Microelectronics |
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