| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DS18030-010 |
Addressable Dual Digital Potentiometer |
MAXIM - Dallas Semiconductor |
| 2 |
DS18030-050 |
Addressable Dual Digital Potentiometer |
MAXIM - Dallas Semiconductor |
| 3 |
DS18030-100 |
Addressable Dual Digital Potentiometer |
MAXIM - Dallas Semiconductor |
| 4 |
FVP18030IM3LSG1 |
Sustain PDP SPMTM |
Fairchild Semiconductor |
| 5 |
MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 6 |
MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 7 |
MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 8 |
MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 9 |
MRF18030ALR3 |
RF Power Field Effect Transistors |
Motorola |
| 10 |
MRF18030ALSR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 11 |
MRF18030AR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 12 |
MRF18030ASR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 13 |
MRF18030B |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 14 |
MRF18030B |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 15 |
MRF18030B |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 16 |
MRF18030BLR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 17 |
MRF18030BLSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 18 |
MRF18030BR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 19 |
MRF18030BSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 20 |
TPS728180300 |
Single Output LDO, 200mA, Dual Level Fixed (1.8V or 3.0V) with Vset Pin |
Texas Instruments |
| 21 |
TPS728180300YZUR |
Single Output LDO, 200mA, Dual Level Fixed with Vset Pin 5-DSBGA -40 to 125 |
Texas Instruments |
| 22 |
TPS728180300YZUT |
Single Output LDO, 200mA, Dual Level Fixed with Vset Pin 5-DSBGA -40 to 125 |
Texas Instruments |
| 23 |
TPS780180300 |
150mA, LDO Regulator, Ultra-Low Power, Iq 500nA w/ Pin-Selectable, Dual-Level Output Voltage |
Texas Instruments |
| 24 |
TPS780180300DRVR |
150mA, LDO Regulator, Ultra-Low Power, Iq 500nA w/ Pin-Selectable, Dual-Level Output Voltage 6-WSON -40 to 125 |
Texas Instruments |
| 25 |
TPS780180300DRVT |
150mA, LDO Regulator, Ultra-Low Power, Iq 500nA w/ Pin-Selectable, Dual-Level Output Voltage 6-WSON -40 to 125 |
Texas Instruments |
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