| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1A184 |
IA184 LOW-COST, HIGH-LINEARITY ISOLATION AMPLIFIER |
Intronics |
| 2 |
2722 162 06331 |
ISOLATORS for P.C. Board Mounting, frequency range 2074 to 2184 MHz |
Philips |
| 3 |
A1184ELHLT |
A1184 Standard Two-Wire Field-Programmable Chopper-Stabilized Unipolar Hall-Effect Switch |
Allegro MicroSystems |
| 4 |
A1184LLHLT |
A1184 Standard Two-Wire Field-Programmable Chopper-Stabilized Unipolar Hall-Effect Switch |
Allegro MicroSystems |
| 5 |
AUIRF7738L2 |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 184 amperes optimized with low on resistance |
International Rectifier |
| 6 |
AUIRF7738L2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 184 amperes optimized with low on resistance |
International Rectifier |
| 7 |
HYMD564646BXX |
184 Pin Unbuffered DDR SDRAM DIMMs Based on 512Mb B ver |
Hynix Semiconductor |
| 8 |
HYS72D256520GR |
184 Pin Registered Double Data Rate SDRAM Modules |
Infineon |
| 9 |
IRF7737 |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 184 amperes optimized with low on resistance. |
International Rectifier |
| 10 |
IRF7737L2TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 184 amperes optimized with low on resistance. |
International Rectifier |
| 11 |
UPA828 |
HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
NEC |
| 12 |
UPA828TF |
HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
NEC |
| 13 |
UPA828TF-T1 |
HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
NEC |
| | | |
