| No. |
Part Name |
Description |
Manufacturer |
| 1 |
NGB18N40CLB |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) |
ON Semiconductor |
| 2 |
NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) |
ON Semiconductor |
| 3 |
NGD18N40CLB |
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on) |
ON Semiconductor |
| 4 |
NGD18N40CLBT4 |
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on) |
ON Semiconductor |
| 5 |
NGD18N45CLB |
Ignition IGBT, N-Channel, 18 A, 450 V, DPAK |
ON Semiconductor |
| 6 |
STGB18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 7 |
STGB18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 8 |
STGB18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 9 |
STGD18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 10 |
STGD18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 11 |
STGD18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 12 |
STGP18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 13 |
T718N400 |
Mains Frequency Thyristor |
IPRS Baneasa |
| | | |
