| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1504-380G |
Delay 380 +/-19 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 2 |
1519 SERIES |
10-TAP DIP DELAY LINE TD/TR = 5 |
Data Delay Devices Inc |
| 3 |
19 ZIP |
Package dimensions |
Samsung Electronic |
| 4 |
19 ZIP |
19ZIP Package Dimensions |
Samsung Electronic |
| 5 |
1N4119 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 6 |
1N4119 (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
| 7 |
1N4619 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 8 |
1N4619 (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
| 9 |
1N5249 |
500mW, 19 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 10 |
1N5249A |
19 V, 6.6 mA, zener diode |
Leshan Radio Company |
| 11 |
1N5249AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 19 V. Tolerance +-10%. |
Microsemi |
| 12 |
1N5249BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 19 V. Tolerance +-5%. |
Microsemi |
| 13 |
1N5249C |
19 V, 6.6 mA, zener diode |
Leshan Radio Company |
| 14 |
1N5249D |
19 V, 6.6 mA, zener diode |
Leshan Radio Company |
| 15 |
1N5249UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 19 V. |
Microsemi |
| 16 |
1N5356B |
19 V, 65 mA, 5 W glass passivated zener diode |
Fagor |
| 17 |
1N5356B |
19 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 18 |
1SMC5356 |
19 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 19 |
24 |
Marking for NE85619 part number, 19 NEC package |
NEC |
| 20 |
24 |
Marking for NE85619 part number, 19 NEC package |
NEC |
| 21 |
2C3019 |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
| 22 |
2N2219 J |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 23 |
2N2219 JTX |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 24 |
2N2219 JTXV |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 25 |
2N2905 |
PNP Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2219 NPN complementary |
Motorola |
| 26 |
2N3019 |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
| 27 |
2N3019 J |
Medium Power NPN Transistor |
National Semiconductor |
| 28 |
2N3019 JTX |
Medium Power NPN Transistor |
National Semiconductor |
| 29 |
2N3019 JTXV |
Medium Power NPN Transistor |
National Semiconductor |
| 30 |
2N3019S |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
| | | |
