| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP150A |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/192.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 243 V @ Ipp = 62 A. |
Panjit International Inc |
| 2 |
15KP150CA |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/192.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 243 V @ Ipp = 62 A. |
Panjit International Inc |
| 3 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 4 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 5 |
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 6 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 7 |
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 8 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 9 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 10 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 11 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 12 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 13 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 14 |
1924 |
Marking for NE32740A part number, 40A/B NEC package |
NEC |
| 15 |
1925 |
Marking for NE32740 part number, 40A/B NEC package |
NEC |
| 16 |
1926 |
Marking for NE73440A(D) part number, 40A/B NEC package |
NEC |
| 17 |
1927 |
Marking for NE73440B(D) part number, 40A/B NEC package |
NEC |
| 18 |
1A192 |
High-Performance LED(Sensors/ Signal Transmission) |
Mitel Semiconductor |
| 19 |
1N1192 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 20 |
1N1192 |
Medium current silicon rectifier |
Motorola |
| 21 |
1N1192 |
Silicon Rectifier Diode |
Motorola |
| 22 |
1N1192 |
Diode 100V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 23 |
1N1192A |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 24 |
1N1192A |
Silicon Rectifier Diode |
Motorola |
| 25 |
1N1192A |
Diode 100V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 26 |
1N192 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 27 |
1N192 |
Germanium Diode |
COSEM |
| 28 |
1N192 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| 29 |
1N192 |
Germanium Signal Diode |
Motorola |
| 30 |
1N1920 |
Rectifier Diode |
Motorola |
| | | |
