| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ180 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 162V(min), 198V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5FMCJ220 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 198V(min), 242V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 3 |
1.5KE180 |
162- 198V transient voltage suppressor |
DC Components |
| 4 |
1.5KE180 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 162V(min), 198V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 5 |
1.5KE180 |
Transient voltage suppressor. 1500 W. Breakdown voltage 162.0 V(min), 198.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 6 |
1.5KE180C |
Transient voltage suppressor. 1500 W. Breakdown voltage 162.0 V(min), 198.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 7 |
1.5KE220 |
198- 242V transient voltage suppressor |
DC Components |
| 8 |
1.5KE220 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 198V(min), 242V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 9 |
1.5KE220 |
Transient voltage suppressor. 1500 W. Breakdown voltage 198.0 V(min), 242.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 10 |
1.5KE220C |
Transient voltage suppressor. 1500 W. Breakdown voltage 198.0 V(min), 242.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 11 |
15KP180 |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
| 12 |
15KP180A |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |
Panjit International Inc |
| 13 |
15KP180C |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
| 14 |
15KP180CA |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |
Panjit International Inc |
| 15 |
1989-XX |
Tanfilm DIP Resistor Networks |
International Resistive |
| 16 |
1N1198 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 17 |
1N1198 |
Medium current silicon rectifier |
Motorola |
| 18 |
1N1198 |
Silicon Rectifier Diode |
Motorola |
| 19 |
1N1198 |
Diode 600V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 20 |
1N1198A |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 21 |
1N1198A |
Medium current silicon rectifier |
Motorola |
| 22 |
1N1198A |
Silicon Rectifier Diode |
Motorola |
| 23 |
1N1198A |
Diode 600V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 24 |
1N1198A |
Rectifier for industrial and military power supplies |
RCA Solid State |
| 25 |
1N1198A |
Silicon rectifier diodes - normal series |
SESCOSEM |
| 26 |
1N1198RA |
Rectifier for industrial and military power supplies, reverse polarity |
RCA Solid State |
| 27 |
1N198 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 28 |
1N198 |
Germanium Diode |
COSEM |
| 29 |
1N198 |
Germanium diode |
IPRS Baneasa |
| 30 |
1N198 |
Gold Bond Germanium Diode |
ITT Semiconductors |
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